Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al 0.3 Ga 0.7 N/GaN/i‐Al x Ga 1− x N/GaN High‐Electron‐Mobility Transistors

A detailed analysis of self‐consistent potentials, electric fields, electron distributions, and transport properties of dual‐channel (DC) n‐Al 0.3 Ga 0.7 N/GaN/i‐Al x Ga 1− x N/GaN high‐electron‐mobility transistors (HEMTs) is performed in this article. The 2D electron gas (2DEG) densities and mobil...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2024-05, Vol.221 (10)
Hauptverfasser:	Cai, Jing, Yao, Ruo‐He, Geng, Kui‐Wei
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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