Electrically Active Defects Induced by α‐Particle Irradiation in p‐Type Si Surface Barrier Detector

Herein, the investigation of radiation‐induced defects generated in the Al/SiO2/p‐type FZ Si surface barrier detector upon irradiation with α‐particles at room temperature using capacitance−voltage (C−V) and current deep‐level transient spectroscopy (IDLTS) methods is conducted. The carried out C−V...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2021-12, Vol.218 (23), p.n/a, Article 2100212
Hauptverfasser:	Bakhlanov, Sergey, Bazlov, Nikolay, Chernobrovkin, Ilia, Danilov, Denis, Derbin, Alexander, Drachnev, Ilia, Kotina, Irina, Konkov, Oleg, Kuzmichev, Artem, Mikulich, Maksim, Muratova, Valentina, Trushin, Maxim, Unzhakov, Evgeniy
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum deep-level transient spectroscopy Defects Irradiation Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Physics, Condensed Matter Radiation radiation-induced defects Room temperature Science & Technology semiconductor detectors silicon Silicon dioxide Technology α-particles
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