Electrically Active Defects Induced by α‐Particle Irradiation in p‐Type Si Surface Barrier Detector

Herein, the investigation of radiation‐induced defects generated in the Al/SiO2/p‐type FZ Si surface barrier detector upon irradiation with α‐particles at room temperature using capacitance−voltage (C−V) and current deep‐level transient spectroscopy (IDLTS) methods is conducted. The carried out C−V measurements indicate the formation of at least 8 × 1012 cm−3 radiation‐induced acceptor traps at the depth fairly close to that where, according to TRIM simulations, the highest concentration of vacancy‐interstitial pairs is created by the incoming α‐particles. The studies conducted by the current DLTS technique allow to relate the observed increase in the acceptor concentration with the near‐midgap level at E V + 0.56 eV. This level can apparently be associated with V2O defects recognized previously to be responsible for the space−charge sign inversion in the irradiated n‐type Si detectors. Herein, the defects generated in the Al/SiO2/p‐type FZ Si surface barrier detector upon irradiation with α‐particles at room temperature using capacitance‐voltage (C−V) and current deep‐level transient spectroscopy (IDLTS) methods are described. Local increase in the acceptor charge and the appearance of the defect level at 0.56 eV above the valence band are shown to occur after irradiation.