Study of Filament Resistive Switching in New Pt/Co 0.2 TiO 3.2 /ITO Devices for Application in Non‐Volatile Memory

Study of Filament Resistive Switching in New Pt/Co 0.2 TiO 3.2 /ITO Devices for Application in Non‐Volatile Memory

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2018-12, Vol.215 (24)
Hauptverfasser: Góis, Meirielle M., Valença, Eduardo, Machado, Rogerio, Lopez, Elvis O., Mello, Alexandre, Rodrigues, Cleber L., Macêdo, Marcelo A.
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container_issue 24
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container_title Physica status solidi. A, Applications and materials science
container_volume 215
creator Góis, Meirielle M.
Valença, Eduardo
Machado, Rogerio
Lopez, Elvis O.
Mello, Alexandre
Rodrigues, Cleber L.
Macêdo, Marcelo A.
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doi_str_mv 10.1002/pssa.201800369
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title Study of Filament Resistive Switching in New Pt/Co 0.2 TiO 3.2 /ITO Devices for Application in Non‐Volatile Memory
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