Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In 2 O 3 thin films (Phys. Status Solidi A 2∕2017)

Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In 2 O 3 thin films (Phys. Status Solidi A 2∕2017)

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2017-02, Vol.214 (2), p.1770109
Hauptverfasser: Hoyer, Karoline L., Hubmann, Andreas H., Klein, Andreas
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Sprache:eng
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container_title Physica status solidi. A, Applications and materials science
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creator Hoyer, Karoline L.
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Klein, Andreas
description
doi_str_mv 10.1002/pssa.201770109
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title Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In 2 O 3 thin films (Phys. Status Solidi A 2∕2017)
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