Surface passivation for ultrathin Al 2 O 3 layers grown at low temperature by thermal atomic layer deposition

Thin layers of Al 2 O 3 with thickness t ox  ≤ 8 nm were grown by thermal atomic layer deposition at low temperature of 100 °C and applied to achieve functional surface passivation of crystalline silicon substrates. Measurements of the effective lifetime were performed to characterize the surface pa...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2013-04, Vol.210 (4), p.732-736
Hauptverfasser:	Frascaroli, J., Seguini, G., Cianci, E., Saynova, D., van Roosmalen, J., Perego, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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