Optical characterization of magnetron sputtered p-type ZnO thin films codoped with Ga and As

ZnO films codoped with Ga and As were characterized in detail. It was observed by I–V measurement that the films maintain p‐type characteristics even when the Ga/As ratio is as high as 9. Low‐temperature photoluminescence spectra revealed emissions at 3.36, 3.35, 3.30, and 3.22 eV, which were assign...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2012-02, Vol.209 (2), p.294-296
Hauptverfasser:	Park, Jang-Ho, Seo, Ho-Yeon, Jeong, Sang-Hun, Lee, Byung-Teak
Format:	Artikel
Sprache:	eng
Schlagworte:	codoping p-doping photoluminescence ZnO
Online-Zugang:	Volltext
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