Tuning the exchange bias training effect in top- and bottom-pinning FeNi/FeMn bilayers
A magnetic field of 600 Oe, different from the original pinning direction (PD), is applied in the film plane to tune the exchange bias (EB) training effect in both top‐ and bottom‐pinning FeNi/FeMn bilayers. Compared to the top‐pinning structures, the training effects in the bottom‐pinning ones are...
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Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2011-10, Vol.208 (10), p.2369-2372 |
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creator | Yang, M. Ge, J. J. Xue, X. B. Yang, Y. Rui, W. B. You, B. Sun, L. Du, J. Hu, A. |
description | A magnetic field of 600 Oe, different from the original pinning direction (PD), is applied in the film plane to tune the exchange bias (EB) training effect in both top‐ and bottom‐pinning FeNi/FeMn bilayers. Compared to the top‐pinning structures, the training effects in the bottom‐pinning ones are more easily tuned, characterized by larger rotation of the PD just after the field tuning. The EB tuning effect is thought to be originated from spin frustration near the FM/AF interface, and the interfacial AF spins are less stable and readily to be tuned by external field in the bottom‐pinning bilayers than those in the top‐pinning bilayers. This statement can also be validated by the azimuthal dependence of the EB effect. |
doi_str_mv | 10.1002/pssa.201084190 |
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J. ; Xue, X. B. ; Yang, Y. ; Rui, W. B. ; You, B. ; Sun, L. ; Du, J. ; Hu, A.</creator><creatorcontrib>Yang, M. ; Ge, J. J. ; Xue, X. B. ; Yang, Y. ; Rui, W. B. ; You, B. ; Sun, L. ; Du, J. ; Hu, A.</creatorcontrib><description>A magnetic field of 600 Oe, different from the original pinning direction (PD), is applied in the film plane to tune the exchange bias (EB) training effect in both top‐ and bottom‐pinning FeNi/FeMn bilayers. Compared to the top‐pinning structures, the training effects in the bottom‐pinning ones are more easily tuned, characterized by larger rotation of the PD just after the field tuning. The EB tuning effect is thought to be originated from spin frustration near the FM/AF interface, and the interfacial AF spins are less stable and readily to be tuned by external field in the bottom‐pinning bilayers than those in the top‐pinning bilayers. This statement can also be validated by the azimuthal dependence of the EB effect.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201084190</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>azimuthal dependence ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; exchange bias ; Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures) ; Magnetic properties and materials ; Magnetic properties of surface, thin films and multilayers ; Physics ; spin frustration ; training effect</subject><ispartof>Physica status solidi. A, Applications and materials science, 2011-10, Vol.208 (10), p.2369-2372</ispartof><rights>Copyright © 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3570-84e50ea2d9171484ac1d532563ee76d49ed97cdcad1cd0f6e9470615f94aef8d3</citedby><cites>FETCH-LOGICAL-c3570-84e50ea2d9171484ac1d532563ee76d49ed97cdcad1cd0f6e9470615f94aef8d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.201084190$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.201084190$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24616894$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yang, M.</creatorcontrib><creatorcontrib>Ge, J. 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The EB tuning effect is thought to be originated from spin frustration near the FM/AF interface, and the interfacial AF spins are less stable and readily to be tuned by external field in the bottom‐pinning bilayers than those in the top‐pinning bilayers. This statement can also be validated by the azimuthal dependence of the EB effect.</description><subject>azimuthal dependence</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>exchange bias</subject><subject>Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)</subject><subject>Magnetic properties and materials</subject><subject>Magnetic properties of surface, thin films and multilayers</subject><subject>Physics</subject><subject>spin frustration</subject><subject>training effect</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkMFPwjAUhxejiYhePfficdBuXbseCQoYEU1APDalfYXq2JZ1RvjvBWYWb57eS973_V7yC4JbgnsE46hfeq96ESY4pUTgs6BDUhaFLCbivN0xvgyuvP_AmCaUk06wXHzlLl-jegMIdnqj8jWglVMe1ZVypxNYC7pGLkd1UYZI5QatiroutmHp8hMxgpnrj-A5P5iZ2kPlr4MLqzIPN7-zG7yNHhbDSTh9GT8OB9NQxwnHYUohwaAiIwgnNKVKE5PEUcJiAM4MFWAE10YrQ7TBloGgHDOSWEEV2NTE3aDX5Oqq8L4CK8vKbVW1lwTLYyvy2IpsWzkId41QKq9VZiuVa-dbK6KMsFTQAyca7ttlsP8nVb7O54O_P8LGdb6GXeuq6lMyHvNEvs_Gkj8t75eT2Ugu4h9cBoNb</recordid><startdate>201110</startdate><enddate>201110</enddate><creator>Yang, M.</creator><creator>Ge, J. J.</creator><creator>Xue, X. B.</creator><creator>Yang, Y.</creator><creator>Rui, W. B.</creator><creator>You, B.</creator><creator>Sun, L.</creator><creator>Du, J.</creator><creator>Hu, A.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201110</creationdate><title>Tuning the exchange bias training effect in top- and bottom-pinning FeNi/FeMn bilayers</title><author>Yang, M. ; Ge, J. J. ; Xue, X. B. ; Yang, Y. ; Rui, W. B. ; You, B. ; Sun, L. ; Du, J. ; Hu, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3570-84e50ea2d9171484ac1d532563ee76d49ed97cdcad1cd0f6e9470615f94aef8d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>azimuthal dependence</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>exchange bias</topic><topic>Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)</topic><topic>Magnetic properties and materials</topic><topic>Magnetic properties of surface, thin films and multilayers</topic><topic>Physics</topic><topic>spin frustration</topic><topic>training effect</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, M.</creatorcontrib><creatorcontrib>Ge, J. J.</creatorcontrib><creatorcontrib>Xue, X. B.</creatorcontrib><creatorcontrib>Yang, Y.</creatorcontrib><creatorcontrib>Rui, W. B.</creatorcontrib><creatorcontrib>You, B.</creatorcontrib><creatorcontrib>Sun, L.</creatorcontrib><creatorcontrib>Du, J.</creatorcontrib><creatorcontrib>Hu, A.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, M.</au><au>Ge, J. J.</au><au>Xue, X. B.</au><au>Yang, Y.</au><au>Rui, W. B.</au><au>You, B.</au><au>Sun, L.</au><au>Du, J.</au><au>Hu, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tuning the exchange bias training effect in top- and bottom-pinning FeNi/FeMn bilayers</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>Phys. Status Solidi A</addtitle><date>2011-10</date><risdate>2011</risdate><volume>208</volume><issue>10</issue><spage>2369</spage><epage>2372</epage><pages>2369-2372</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>A magnetic field of 600 Oe, different from the original pinning direction (PD), is applied in the film plane to tune the exchange bias (EB) training effect in both top‐ and bottom‐pinning FeNi/FeMn bilayers. Compared to the top‐pinning structures, the training effects in the bottom‐pinning ones are more easily tuned, characterized by larger rotation of the PD just after the field tuning. The EB tuning effect is thought to be originated from spin frustration near the FM/AF interface, and the interfacial AF spins are less stable and readily to be tuned by external field in the bottom‐pinning bilayers than those in the top‐pinning bilayers. This statement can also be validated by the azimuthal dependence of the EB effect.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.201084190</doi><tpages>4</tpages></addata></record> |
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subjects | azimuthal dependence Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology exchange bias Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures) Magnetic properties and materials Magnetic properties of surface, thin films and multilayers Physics spin frustration training effect |
title | Tuning the exchange bias training effect in top- and bottom-pinning FeNi/FeMn bilayers |
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