Thermal resistance, gain, and antiguiding factor of GaN-based cyan laser diodes
We present a highly precise method to determine the thermal resistance and the antiguiding factor of (Al,In)GaN laser diodes. Knowing the thermal resistance, we are able to exclude thermal effects and study the charge carrier density dependence of the optical gain and the refractive index. From thes...
Gespeichert in:
| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2011-07, Vol.208 (7), p.1600-1602 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1602 |
|---|---|
| container_issue | 7 |
| container_start_page | 1600 |
| container_title | Physica status solidi. A, Applications and materials science |
| container_volume | 208 |
| creator | Scheibenzuber, W. G. Schwarz, U. T. Lermer, T. Lutgen, S. Strauss, U. |
| description | We present a highly precise method to determine the thermal resistance and the antiguiding factor of (Al,In)GaN laser diodes. Knowing the thermal resistance, we are able to exclude thermal effects and study the charge carrier density dependence of the optical gain and the refractive index. From these properties we determine the antiguiding factor. The method is applied to 489 nm (Al,In)GaN laser diodes with a high charge carrier density in the active region. For these laser diodes we find a high antiguiding factor of 10 ± 1 at the laser wavelength.
Schematic drawing of the heat transport in a Fabry–Perot‐type ridge laser diode. |
| doi_str_mv | 10.1002/pssa.201001162 |
| format | Article |
| fullrecord | <record><control><sourceid>istex_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_pssa_201001162</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_DTJ8WVQL_Z</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3572-fb89de1bf5264734e62a458f47d9acc580744f9203390b66607199d0bf89da413</originalsourceid><addsrcrecordid>eNqFkL1PwzAQxSMEEqWwMntha4q_4sRjVaCAKgpqoRKLdYntYkiTyi6C_vekCorYGE73hvd7p3tRdE7wkGBMLzchwJDiRhMi6EHUI5mgsWBEHnYa4-PoJIR3jHnCU9KLZos349dQIm-CC1uoCjNAK3DVAEGlm9m61afTrlohC8W29qi2aAIPcQ7BaFTsoEJlIz3SrtYmnEZHFspgzn53P3q-uV6Mb-PpbHI3Hk3jgiUpjW2eSW1IbhMqeMq4ERR4klmeaglFkWQ45dxKihmTOBdC4JRIqXFuGw44Yf1o2OYWvg7BG6s23q3B7xTBal-H2tehujoa4KIFNhAKKK1vXnWhoyhnjEuOG59sfV-uNLt_UtXjfD76eyNu2aZJ892x4D-USFmaqOXDRF0t7rPly9NUvbIfAQR_dg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Thermal resistance, gain, and antiguiding factor of GaN-based cyan laser diodes</title><source>Wiley Online Library All Journals</source><creator>Scheibenzuber, W. G. ; Schwarz, U. T. ; Lermer, T. ; Lutgen, S. ; Strauss, U.</creator><creatorcontrib>Scheibenzuber, W. G. ; Schwarz, U. T. ; Lermer, T. ; Lutgen, S. ; Strauss, U.</creatorcontrib><description>We present a highly precise method to determine the thermal resistance and the antiguiding factor of (Al,In)GaN laser diodes. Knowing the thermal resistance, we are able to exclude thermal effects and study the charge carrier density dependence of the optical gain and the refractive index. From these properties we determine the antiguiding factor. The method is applied to 489 nm (Al,In)GaN laser diodes with a high charge carrier density in the active region. For these laser diodes we find a high antiguiding factor of 10 ± 1 at the laser wavelength.
Schematic drawing of the heat transport in a Fabry–Perot‐type ridge laser diode.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201001162</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>antiguiding ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; III-nitrides ; laser diodes ; Lasers ; optical gain ; Optics ; Physics ; Semiconductor lasers; laser diodes</subject><ispartof>Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1600-1602</ispartof><rights>Copyright © 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3572-fb89de1bf5264734e62a458f47d9acc580744f9203390b66607199d0bf89da413</citedby><cites>FETCH-LOGICAL-c3572-fb89de1bf5264734e62a458f47d9acc580744f9203390b66607199d0bf89da413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.201001162$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.201001162$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1416,27923,27924,45573,45574</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24334940$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Scheibenzuber, W. G.</creatorcontrib><creatorcontrib>Schwarz, U. T.</creatorcontrib><creatorcontrib>Lermer, T.</creatorcontrib><creatorcontrib>Lutgen, S.</creatorcontrib><creatorcontrib>Strauss, U.</creatorcontrib><title>Thermal resistance, gain, and antiguiding factor of GaN-based cyan laser diodes</title><title>Physica status solidi. A, Applications and materials science</title><addtitle>Phys. Status Solidi A</addtitle><description>We present a highly precise method to determine the thermal resistance and the antiguiding factor of (Al,In)GaN laser diodes. Knowing the thermal resistance, we are able to exclude thermal effects and study the charge carrier density dependence of the optical gain and the refractive index. From these properties we determine the antiguiding factor. The method is applied to 489 nm (Al,In)GaN laser diodes with a high charge carrier density in the active region. For these laser diodes we find a high antiguiding factor of 10 ± 1 at the laser wavelength.
Schematic drawing of the heat transport in a Fabry–Perot‐type ridge laser diode.</description><subject>antiguiding</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>III-nitrides</subject><subject>laser diodes</subject><subject>Lasers</subject><subject>optical gain</subject><subject>Optics</subject><subject>Physics</subject><subject>Semiconductor lasers; laser diodes</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkL1PwzAQxSMEEqWwMntha4q_4sRjVaCAKgpqoRKLdYntYkiTyi6C_vekCorYGE73hvd7p3tRdE7wkGBMLzchwJDiRhMi6EHUI5mgsWBEHnYa4-PoJIR3jHnCU9KLZos349dQIm-CC1uoCjNAK3DVAEGlm9m61afTrlohC8W29qi2aAIPcQ7BaFTsoEJlIz3SrtYmnEZHFspgzn53P3q-uV6Mb-PpbHI3Hk3jgiUpjW2eSW1IbhMqeMq4ERR4klmeaglFkWQ45dxKihmTOBdC4JRIqXFuGw44Yf1o2OYWvg7BG6s23q3B7xTBal-H2tehujoa4KIFNhAKKK1vXnWhoyhnjEuOG59sfV-uNLt_UtXjfD76eyNu2aZJ892x4D-USFmaqOXDRF0t7rPly9NUvbIfAQR_dg</recordid><startdate>201107</startdate><enddate>201107</enddate><creator>Scheibenzuber, W. G.</creator><creator>Schwarz, U. T.</creator><creator>Lermer, T.</creator><creator>Lutgen, S.</creator><creator>Strauss, U.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201107</creationdate><title>Thermal resistance, gain, and antiguiding factor of GaN-based cyan laser diodes</title><author>Scheibenzuber, W. G. ; Schwarz, U. T. ; Lermer, T. ; Lutgen, S. ; Strauss, U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3572-fb89de1bf5264734e62a458f47d9acc580744f9203390b66607199d0bf89da413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>antiguiding</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>III-nitrides</topic><topic>laser diodes</topic><topic>Lasers</topic><topic>optical gain</topic><topic>Optics</topic><topic>Physics</topic><topic>Semiconductor lasers; laser diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Scheibenzuber, W. G.</creatorcontrib><creatorcontrib>Schwarz, U. T.</creatorcontrib><creatorcontrib>Lermer, T.</creatorcontrib><creatorcontrib>Lutgen, S.</creatorcontrib><creatorcontrib>Strauss, U.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Scheibenzuber, W. G.</au><au>Schwarz, U. T.</au><au>Lermer, T.</au><au>Lutgen, S.</au><au>Strauss, U.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal resistance, gain, and antiguiding factor of GaN-based cyan laser diodes</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>Phys. Status Solidi A</addtitle><date>2011-07</date><risdate>2011</risdate><volume>208</volume><issue>7</issue><spage>1600</spage><epage>1602</epage><pages>1600-1602</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>We present a highly precise method to determine the thermal resistance and the antiguiding factor of (Al,In)GaN laser diodes. Knowing the thermal resistance, we are able to exclude thermal effects and study the charge carrier density dependence of the optical gain and the refractive index. From these properties we determine the antiguiding factor. The method is applied to 489 nm (Al,In)GaN laser diodes with a high charge carrier density in the active region. For these laser diodes we find a high antiguiding factor of 10 ± 1 at the laser wavelength.
Schematic drawing of the heat transport in a Fabry–Perot‐type ridge laser diode.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.201001162</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1862-6300 |
| ispartof | Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1600-1602 |
| issn | 1862-6300 1862-6319 |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_pssa_201001162 |
| source | Wiley Online Library All Journals |
| subjects | antiguiding Exact sciences and technology Fundamental areas of phenomenology (including applications) III-nitrides laser diodes Lasers optical gain Optics Physics Semiconductor lasers laser diodes |
| title | Thermal resistance, gain, and antiguiding factor of GaN-based cyan laser diodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T22%3A50%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermal%20resistance,%20gain,%20and%20antiguiding%20factor%20of%20GaN-based%20cyan%20laser%20diodes&rft.jtitle=Physica%20status%20solidi.%20A,%20Applications%20and%20materials%20science&rft.au=Scheibenzuber,%20W.%20G.&rft.date=2011-07&rft.volume=208&rft.issue=7&rft.spage=1600&rft.epage=1602&rft.pages=1600-1602&rft.issn=1862-6300&rft.eissn=1862-6319&rft_id=info:doi/10.1002/pssa.201001162&rft_dat=%3Cistex_cross%3Eark_67375_WNG_DTJ8WVQL_Z%3C/istex_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |