Initiating polarity inversion in GaN growth using an AlN interlayer

Initiating polarity inversion in GaN growth using an AlN interlayer

In this work, we show that the polarity of GaN grown on N‐polar material can be controlled through a combination of surface conditioning and introduction of a non‐Mg inversion layer (IL). The IL we use is a thin, low‐temperature AlN layer deposited by metal organic chemical vapor deposition (MOCVD)....

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2011-07, Vol.208 (7), p.1504-1506
Hauptverfasser: Hite, Jennifer K., Twigg, Mark E., Mastro, Michael A., Eddy Jr, Charles R., Kub, Francis J.
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Sprache:eng
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GaN
III-V
inversion
polarity
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container_issue 7
container_start_page 1504
container_title Physica status solidi. A, Applications and materials science
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creator Hite, Jennifer K.
Twigg, Mark E.
Mastro, Michael A.
Eddy Jr, Charles R.
Kub, Francis J.
description In this work, we show that the polarity of GaN grown on N‐polar material can be controlled through a combination of surface conditioning and introduction of a non‐Mg inversion layer (IL). The IL we use is a thin, low‐temperature AlN layer deposited by metal organic chemical vapor deposition (MOCVD). The subsequent inverted films are Ga‐polar that do not contain inversion domain boundaries and with crystal quality similar to MOCVD films grown on sapphire. The polarity inversion technique is enhanced by the addition of an etching step prior to AlN deposition.
doi_str_mv 10.1002/pssa.201001123
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source Wiley Online Library - AutoHoldings Journals
subjects GaN
III-V
inversion
polarity
title Initiating polarity inversion in GaN growth using an AlN interlayer
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