Non-equilibrium carrier dynamics and many body effects in highly excited GaN

Non-equilibrium carrier dynamics and many body effects in highly excited GaN

Ultrafast non‐equilibrium carrier dynamics and many body effects have been investigated in GaN beyond the Mott density. The transient (∼1 ps) induced absorption was observed near the band edge due to band gap renormalisation; collision broadening and temporal evolution of the mean carrier energy wer...

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2011-05, Vol.208 (5), p.1159-1165
Hauptverfasser: Kyhm, Kwangseuk, Rota, Lucio, Taylor, Robert A.
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GaN
many body effect
non-equilibrium carrier dynamics
ultrafast spectroscopy
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Rota, Lucio
Taylor, Robert A.
description Ultrafast non‐equilibrium carrier dynamics and many body effects have been investigated in GaN beyond the Mott density. The transient (∼1 ps) induced absorption was observed near the band edge due to band gap renormalisation; collision broadening and temporal evolution of the mean carrier energy were also obtained experimentally. The development of the longitudinal optical (LO)‐phonon induced non‐thermal electron distribution observed in the pump‐probe at early times (≤1 ps) was in excellent agreement with a Monte‐Carlo simulation, where the mean carrier energy loss rate of screened carrier‐phonon interactions was found to be further reduced due to the hot phonon effect. Schematic diagram of non‐equilibrium carrier dynamics.
doi_str_mv 10.1002/pssa.201000065
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subjects GaN
many body effect
non-equilibrium carrier dynamics
ultrafast spectroscopy
title Non-equilibrium carrier dynamics and many body effects in highly excited GaN
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