Self-assembled InGaAs tandem nanostructures consisting of a hole and pyramid on GaAs (311)A by droplet epitaxy
We report on the fabrication self‐assembled tandem (pyramidal‐ holed) InGaAs nanostructures on GaAs (311)A in comparison with the nanostructures on (100) surface. Under an identical growth condition, the fabricated nanostructures are characteristically dissimilar; ring‐shaped nanostructures on GaAs...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2010-02, Vol.207 (2), p.348-353 |
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| container_title | Physica status solidi. A, Applications and materials science |
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| creator | Lee, J. H. Wang, Zh. M. Kim, E. S. Kim, N. Y. Park, S. H. Salamo, G. J. |
| description | We report on the fabrication self‐assembled tandem (pyramidal‐ holed) InGaAs nanostructures on GaAs (311)A in comparison with the nanostructures on (100) surface. Under an identical growth condition, the fabricated nanostructures are characteristically dissimilar; ring‐shaped nanostructures on GaAs (100) and pyramidal‐holed nanostructures on (311)A. The underlying formation mechanism of these interesting nanostructures can be understood in terms of intermixing, dissolution of GaAs substrate and surface diffusion driven by a surface reconstruction. The size and density of nanostructures can be controlled by modifying the droplet size, density, and thermal energy applied during the fabrication of droplets and nanostructures. These unique InGaAs nanostructures can offer promising applications in optoelectronics. |
| doi_str_mv | 10.1002/pssa.200925406 |
| format | Article |
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(a)</addtitle><date>2010-02</date><risdate>2010</risdate><volume>207</volume><issue>2</issue><spage>348</spage><epage>353</epage><pages>348-353</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>We report on the fabrication self‐assembled tandem (pyramidal‐ holed) InGaAs nanostructures on GaAs (311)A in comparison with the nanostructures on (100) surface. Under an identical growth condition, the fabricated nanostructures are characteristically dissimilar; ring‐shaped nanostructures on GaAs (100) and pyramidal‐holed nanostructures on (311)A. The underlying formation mechanism of these interesting nanostructures can be understood in terms of intermixing, dissolution of GaAs substrate and surface diffusion driven by a surface reconstruction. The size and density of nanostructures can be controlled by modifying the droplet size, density, and thermal energy applied during the fabrication of droplets and nanostructures. 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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | 68.37.Ps 81.05.Ea 81.07.Bc 81.15.Hi 81.16.Dn Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of nanofabrication Nanoscale pattern formation Physics |
| title | Self-assembled InGaAs tandem nanostructures consisting of a hole and pyramid on GaAs (311)A by droplet epitaxy |
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