Homoepitaxial growth of high-quality nonpolar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes
Characteristics of homoepitaxial high‐quality nonpolar ZnO (11$ \bar 2 $0) films and a useful measurement method for determining structures of those films are described. Homoepitaxial growth of high‐quality nonpolar ZnO (11$ \bar 2 $0) films could be achieved by atmospheric‐pressure metal organic ch...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2009-05, Vol.206 (5), p.944-947 |
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| container_title | Physica status solidi. A, Applications and materials science |
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| creator | Kashiwaba, Yasuhiro Abe, Takami Nakagawa, Akira Endo, Haruyuki Niikura, Ikuo Kashiwaba, Yasube |
| description | Characteristics of homoepitaxial high‐quality nonpolar ZnO (11$ \bar 2 $0) films and a useful measurement method for determining structures of those films are described. Homoepitaxial growth of high‐quality nonpolar ZnO (11$ \bar 2 $0) films could be achieved by atmospheric‐pressure metal organic chemical vapor deposition using zinc acetylacetonate and oxygen gas. The value of full width at half‐maximum (FWHM) of X‐ray rocking curves (XRCs) of asymmetrical ZnO (20$ \bar 2 $0) and (11$ \bar 2 $2) planes increased with increase in oxygen gas flow rate, and the change in FWHM value corresponded to FWHM of near‐band‐edge emission of photoluminescence spectra. On the other hand, the FWHM value of the XRC of the symmetrical ZnO (11$ \bar 2 $0) plane did not change with change in oxygen gas flow rate, and the FWHM values of all samples were nearly equal to the FWHM value of a single crystal ZnO (11$ \bar 2 $0) substrate. The smallest FWHM values of XRCs of ZnO (11$ \bar 2 $0), (20$ \bar 2 $0) and (11$ \bar 2 $2) planes in the sample grown under the condition of an oxygen gas flow rate of 50 sccm were about 30 arcsec, 35 arcsec and 40 arcsec, respectively. These results indicate that the homoepitaxial ZnO (11$ \bar 2 $0) film has good crystallinity. XRC measurement for asymmetrical planes is useful for evaluating homoepitaxial ZnO (11$ \bar 2 $0) films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssa.200881305 |
| format | Article |
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Homoepitaxial growth of high‐quality nonpolar ZnO (11$ \bar 2 $0) films could be achieved by atmospheric‐pressure metal organic chemical vapor deposition using zinc acetylacetonate and oxygen gas. The value of full width at half‐maximum (FWHM) of X‐ray rocking curves (XRCs) of asymmetrical ZnO (20$ \bar 2 $0) and (11$ \bar 2 $2) planes increased with increase in oxygen gas flow rate, and the change in FWHM value corresponded to FWHM of near‐band‐edge emission of photoluminescence spectra. On the other hand, the FWHM value of the XRC of the symmetrical ZnO (11$ \bar 2 $0) plane did not change with change in oxygen gas flow rate, and the FWHM values of all samples were nearly equal to the FWHM value of a single crystal ZnO (11$ \bar 2 $0) substrate. The smallest FWHM values of XRCs of ZnO (11$ \bar 2 $0), (20$ \bar 2 $0) and (11$ \bar 2 $2) planes in the sample grown under the condition of an oxygen gas flow rate of 50 sccm were about 30 arcsec, 35 arcsec and 40 arcsec, respectively. These results indicate that the homoepitaxial ZnO (11$ \bar 2 $0) film has good crystallinity. XRC measurement for asymmetrical planes is useful for evaluating homoepitaxial ZnO (11$ \bar 2 $0) films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.200881305</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>61.05.cp ; 68.55.J ; 78.55.Et ; 81.15.Gh ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Ii-vi semiconductors ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Physica status solidi. A, Applications and materials science, 2009-05, Vol.206 (5), p.944-947</ispartof><rights>Copyright © 2009 WILEY‐VCH Verlag GmbH & Co. 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A, Applications and materials science</title><addtitle>phys. stat. sol. (a)</addtitle><description>Characteristics of homoepitaxial high‐quality nonpolar ZnO (11$ \bar 2 $0) films and a useful measurement method for determining structures of those films are described. Homoepitaxial growth of high‐quality nonpolar ZnO (11$ \bar 2 $0) films could be achieved by atmospheric‐pressure metal organic chemical vapor deposition using zinc acetylacetonate and oxygen gas. The value of full width at half‐maximum (FWHM) of X‐ray rocking curves (XRCs) of asymmetrical ZnO (20$ \bar 2 $0) and (11$ \bar 2 $2) planes increased with increase in oxygen gas flow rate, and the change in FWHM value corresponded to FWHM of near‐band‐edge emission of photoluminescence spectra. On the other hand, the FWHM value of the XRC of the symmetrical ZnO (11$ \bar 2 $0) plane did not change with change in oxygen gas flow rate, and the FWHM values of all samples were nearly equal to the FWHM value of a single crystal ZnO (11$ \bar 2 $0) substrate. The smallest FWHM values of XRCs of ZnO (11$ \bar 2 $0), (20$ \bar 2 $0) and (11$ \bar 2 $2) planes in the sample grown under the condition of an oxygen gas flow rate of 50 sccm were about 30 arcsec, 35 arcsec and 40 arcsec, respectively. These results indicate that the homoepitaxial ZnO (11$ \bar 2 $0) film has good crystallinity. XRC measurement for asymmetrical planes is useful for evaluating homoepitaxial ZnO (11$ \bar 2 $0) films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>61.05.cp</subject><subject>68.55.J</subject><subject>78.55.Et</subject><subject>81.15.Gh</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Ii-vi semiconductors</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkEtPGzEUhUcVSDzKlrU3XU5qj59ZogABCZqKt9hYN67NuPWMp_YEmF_C3yVRqqisWN2zON-5OqcoDgkeEYyr713OMKowVopQzL8Uu0SJqhSUjLc2GuOdYi_n3xgzziTZLd7OYhNt53t49RDQU4ovfY2iQ7V_qsu_Cwi-H1Ab2y4GSOixnSHnQ5PRfECXs8ndMYL2F7LPEBbQ-9iu0L62qP4Q-wF7uDpGjYW8SLaxbY9cTAjy0DS2T96gLkBr89di20HI9uDf3S9uT09uJmflxWx6Pjm6KA3lkpdcjaVg1khMlWIVBicUtpg6xpZdVcUZWzY1IAHmAksjmRCCS8esMMLOBd0vRutck2LOyTrdJd9AGjTBejWrXs2qN7MugW9roINsILgErfF5Q1WECV5RsvSN174XH-zwSar-eX199P-Pcs363NvXDQvpjxaSSq7vf0w1eZzeK8mFvqPvUS6aDA</recordid><startdate>200905</startdate><enddate>200905</enddate><creator>Kashiwaba, Yasuhiro</creator><creator>Abe, Takami</creator><creator>Nakagawa, Akira</creator><creator>Endo, Haruyuki</creator><creator>Niikura, Ikuo</creator><creator>Kashiwaba, Yasube</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200905</creationdate><title>Homoepitaxial growth of high-quality nonpolar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes</title><author>Kashiwaba, Yasuhiro ; Abe, Takami ; Nakagawa, Akira ; Endo, Haruyuki ; Niikura, Ikuo ; Kashiwaba, Yasube</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3575-589764ec70388420af680e03f4430082544045ca7aab607c7466657f4e6c6eb63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>61.05.cp</topic><topic>68.55.J</topic><topic>78.55.Et</topic><topic>81.15.Gh</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Ii-vi semiconductors</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kashiwaba, Yasuhiro</creatorcontrib><creatorcontrib>Abe, Takami</creatorcontrib><creatorcontrib>Nakagawa, Akira</creatorcontrib><creatorcontrib>Endo, Haruyuki</creatorcontrib><creatorcontrib>Niikura, Ikuo</creatorcontrib><creatorcontrib>Kashiwaba, Yasube</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kashiwaba, Yasuhiro</au><au>Abe, Takami</au><au>Nakagawa, Akira</au><au>Endo, Haruyuki</au><au>Niikura, Ikuo</au><au>Kashiwaba, Yasube</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Homoepitaxial growth of high-quality nonpolar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>2009-05</date><risdate>2009</risdate><volume>206</volume><issue>5</issue><spage>944</spage><epage>947</epage><pages>944-947</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>Characteristics of homoepitaxial high‐quality nonpolar ZnO (11$ \bar 2 $0) films and a useful measurement method for determining structures of those films are described. Homoepitaxial growth of high‐quality nonpolar ZnO (11$ \bar 2 $0) films could be achieved by atmospheric‐pressure metal organic chemical vapor deposition using zinc acetylacetonate and oxygen gas. The value of full width at half‐maximum (FWHM) of X‐ray rocking curves (XRCs) of asymmetrical ZnO (20$ \bar 2 $0) and (11$ \bar 2 $2) planes increased with increase in oxygen gas flow rate, and the change in FWHM value corresponded to FWHM of near‐band‐edge emission of photoluminescence spectra. On the other hand, the FWHM value of the XRC of the symmetrical ZnO (11$ \bar 2 $0) plane did not change with change in oxygen gas flow rate, and the FWHM values of all samples were nearly equal to the FWHM value of a single crystal ZnO (11$ \bar 2 $0) substrate. The smallest FWHM values of XRCs of ZnO (11$ \bar 2 $0), (20$ \bar 2 $0) and (11$ \bar 2 $2) planes in the sample grown under the condition of an oxygen gas flow rate of 50 sccm were about 30 arcsec, 35 arcsec and 40 arcsec, respectively. These results indicate that the homoepitaxial ZnO (11$ \bar 2 $0) film has good crystallinity. XRC measurement for asymmetrical planes is useful for evaluating homoepitaxial ZnO (11$ \bar 2 $0) films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.200881305</doi><tpages>4</tpages></addata></record> |
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| ispartof | Physica status solidi. A, Applications and materials science, 2009-05, Vol.206 (5), p.944-947 |
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| source | Wiley Blackwell Journals |
| subjects | 61.05.cp 68.55.J 78.55.Et 81.15.Gh Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Ii-vi semiconductors Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Homoepitaxial growth of high-quality nonpolar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes |
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