InAlN-barrier HFETs with GaN and InGaN channels

Advantages and drawbacks of InN‐containing GaN‐based heterostructure field‐effect transistors (HFETs) are reviewed. The main attention is paid to fundamental processes and experimental observations associated with hot‐electron transport in two‐dimensional electron gas (2DEG) channels subjected to hi...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2009-07, Vol.206 (7), p.1385-1395
Hauptverfasser:	Liberis, J., Matulionienė, I., Matulionis, A., Šermukšnis, E., Xie, J., Leach, J. H., Morkoç, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	73.40.Kp 81.05.Ea 85.30.De 85.30.Tv Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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