Some effects of trapping on the photoelectronic properties of TiO2 single crystals
A slow rise of photocurrent in insulating rutile single crystals at liquid nitrogen temperature is observed when the shallow trapping levels present are initially empty. The slow growth behavior is believed to reflect the increased filling of shallow traps. The increased photocurrent after filling t...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1970-03, Vol.1 (3), p.479-485 |
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| Format: | Artikel |
| Sprache: | eng |
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