Inert Gas Admixtures in PECVD of Titanium Dioxide Thin Films on Polymers-Influence on the UV Absorptance of the Films
A low pressure radio frequency discharge (200 W for 5 min) was operated in oxygen, nitrogen/oxygen and argon/oxygen with small admixtures of titanium(IV)isopropoxide (TTIP). By means of the O2‐flow, the O2‐to‐TTIP ratio q was varied in all the gas mixtures. Besides the growth rate, the absorptance o...
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Veröffentlicht in: | Plasma processes and polymers 2007-04, Vol.4 (S1), p.S64-S68 |
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description | A low pressure radio frequency discharge (200 W for 5 min) was operated in oxygen, nitrogen/oxygen and argon/oxygen with small admixtures of titanium(IV)isopropoxide (TTIP). By means of the O2‐flow, the O2‐to‐TTIP ratio q was varied in all the gas mixtures. Besides the growth rate, the absorptance of films deposited was determined in the range of 200–500 nm. Accordingly, their cut‐off wavelength increased with q for mixtures containing N2 or Ar, while it was unaffected for O2/TTIP mixtures. At 310 nm, the absorption coefficient was a310 = 13 µm−1 for q ≈ 44 in Ar/O2/TTIP and marginally lower in N2/O2/TTIP as well as O2/TTIP. But, for decreasing q, a drastic decrease in a310 ≈ 8 µm−1 was witnessed for O2/TTIP mixtures. In contrast, a310 increased by 2 µm−1 for gas mixtures with Ar or N2. |
doi_str_mv | 10.1002/ppap.200730404 |
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By means of the O2‐flow, the O2‐to‐TTIP ratio q was varied in all the gas mixtures. Besides the growth rate, the absorptance of films deposited was determined in the range of 200–500 nm. Accordingly, their cut‐off wavelength increased with q for mixtures containing N2 or Ar, while it was unaffected for O2/TTIP mixtures. At 310 nm, the absorption coefficient was a310 = 13 µm−1 for q ≈ 44 in Ar/O2/TTIP and marginally lower in N2/O2/TTIP as well as O2/TTIP. But, for decreasing q, a drastic decrease in a310 ≈ 8 µm−1 was witnessed for O2/TTIP mixtures. In contrast, a310 increased by 2 µm−1 for gas mixtures with Ar or N2.</description><identifier>ISSN: 1612-8850</identifier><identifier>EISSN: 1612-8869</identifier><identifier>DOI: 10.1002/ppap.200730404</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>argon ; nitrogen ; plasma enhanced chemical vapour deposition (PECVD) ; polymeric substrate ; titanium dioxide ; titanium(IV)-isopropoxide (TTIP) ; UV absorption</subject><ispartof>Plasma processes and polymers, 2007-04, Vol.4 (S1), p.S64-S68</ispartof><rights>Copyright © 2007 WILEY‐VCH Verlag GmbH & Co. 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By means of the O2‐flow, the O2‐to‐TTIP ratio q was varied in all the gas mixtures. Besides the growth rate, the absorptance of films deposited was determined in the range of 200–500 nm. Accordingly, their cut‐off wavelength increased with q for mixtures containing N2 or Ar, while it was unaffected for O2/TTIP mixtures. At 310 nm, the absorption coefficient was a310 = 13 µm−1 for q ≈ 44 in Ar/O2/TTIP and marginally lower in N2/O2/TTIP as well as O2/TTIP. But, for decreasing q, a drastic decrease in a310 ≈ 8 µm−1 was witnessed for O2/TTIP mixtures. In contrast, a310 increased by 2 µm−1 for gas mixtures with Ar or N2.</description><subject>argon</subject><subject>nitrogen</subject><subject>plasma enhanced chemical vapour deposition (PECVD)</subject><subject>polymeric substrate</subject><subject>titanium dioxide</subject><subject>titanium(IV)-isopropoxide (TTIP)</subject><subject>UV absorption</subject><issn>1612-8850</issn><issn>1612-8869</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkEtPwzAQhCMEEqVw5ew_kLKOE8c5RulTqiASaTlaTuKohrxkJ6L99yQtqrihPexqdr45jGU9Y5hhAOelbUU7cwB8Ai64N9YEU-zYjNHg9np7cG89GPMJQMBjMLH6TS11h1bCoDCv1LHrtTRI1SheRPs5agqUqE7Uqq_QXDVHlUuUHIb3UpWVQc3ga8pTJbWxN3VR9rLO5Kh2B4l2exSmptHtwI9qcVbP4KN1V4jSyKffPbV2y0USre3t22oThVs7I9R3beKIHLAf5IQQ4aYeK4ZhLKUOKSQBKlNG3DzzAQdpRpnwHBf7OWTECxxfYpdMrdklN9ONMVoWvNWqEvrEMfCxND6Wxq-lDUBwAb5VKU__uHkch_Ff1r6wynTyeGWF_uLUJ77HP15XnL4nHoFozQPyA9xYfzk</recordid><startdate>200704</startdate><enddate>200704</enddate><creator>Sonnenfeld, Axel</creator><creator>Rudolf von Rohr, Philipp</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200704</creationdate><title>Inert Gas Admixtures in PECVD of Titanium Dioxide Thin Films on Polymers-Influence on the UV Absorptance of the Films</title><author>Sonnenfeld, Axel ; Rudolf von Rohr, Philipp</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3674-32ad0179d333a4b58f8f888b623fe306eb834dc7019bc68a52417d0c35927e143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>argon</topic><topic>nitrogen</topic><topic>plasma enhanced chemical vapour deposition (PECVD)</topic><topic>polymeric substrate</topic><topic>titanium dioxide</topic><topic>titanium(IV)-isopropoxide (TTIP)</topic><topic>UV absorption</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sonnenfeld, Axel</creatorcontrib><creatorcontrib>Rudolf von Rohr, Philipp</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Plasma processes and polymers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sonnenfeld, Axel</au><au>Rudolf von Rohr, Philipp</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Inert Gas Admixtures in PECVD of Titanium Dioxide Thin Films on Polymers-Influence on the UV Absorptance of the Films</atitle><jtitle>Plasma processes and polymers</jtitle><addtitle>Plasma Processes Polym</addtitle><date>2007-04</date><risdate>2007</risdate><volume>4</volume><issue>S1</issue><spage>S64</spage><epage>S68</epage><pages>S64-S68</pages><issn>1612-8850</issn><eissn>1612-8869</eissn><abstract>A low pressure radio frequency discharge (200 W for 5 min) was operated in oxygen, nitrogen/oxygen and argon/oxygen with small admixtures of titanium(IV)isopropoxide (TTIP). By means of the O2‐flow, the O2‐to‐TTIP ratio q was varied in all the gas mixtures. Besides the growth rate, the absorptance of films deposited was determined in the range of 200–500 nm. Accordingly, their cut‐off wavelength increased with q for mixtures containing N2 or Ar, while it was unaffected for O2/TTIP mixtures. At 310 nm, the absorption coefficient was a310 = 13 µm−1 for q ≈ 44 in Ar/O2/TTIP and marginally lower in N2/O2/TTIP as well as O2/TTIP. But, for decreasing q, a drastic decrease in a310 ≈ 8 µm−1 was witnessed for O2/TTIP mixtures. In contrast, a310 increased by 2 µm−1 for gas mixtures with Ar or N2.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/ppap.200730404</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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subjects | argon nitrogen plasma enhanced chemical vapour deposition (PECVD) polymeric substrate titanium dioxide titanium(IV)-isopropoxide (TTIP) UV absorption |
title | Inert Gas Admixtures in PECVD of Titanium Dioxide Thin Films on Polymers-Influence on the UV Absorptance of the Films |
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