Field effect conductance of conducting polymer nanofibers

We report on the electrical conductance of nanofibers of regioregular poly(3‐hexylthiophene) (RRP3HT) as a function of gate‐induced charge. Nanofibers of RRP3HT were deposited onto SiO2/Si substrates by casting from dilute p‐xylene solutions. An analysis of the nanofibers by atomic force microscopy revealed fiber lengths of 0.2–5 μm, heights of 3–7 nm, and widths of approximately 15 nm. A field effect transistor geometry was used to probe the conductance of webs of nanofibers and single nanofibers; in these measurements, gold electrodes served as source and drain contacts, and the doped SiO2/Si substrate served as the gate. Temperature‐dependent transport studies on webs of nanofibers revealed an activation energy of 108 meV at a gate‐induced hole density of 3.8 × 1012 charges/cm2. Pretreating SiO2 with a hydrophobic hexamethyldisilazane (HMDS) layer reduced the activation energy to 65 meV at the same charge density. The turn‐on gate voltage on treated and untreated substrates increased in magnitude with decreasing temperature. Conductance measurements on single nanofibers on HMDS‐treated SiO2 yielded hole mobilities as high as 0.06 cm2/Vs with on/off current ratios greater than 103. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2674–2680, 2003