Elimination of light-induced degradation with gallium-doped multicrystalline silicon wafers

Lifetime stability of gallium‐doped multicrystalline silicon wafers has been evaluated under illumination. Quality and stability of the Ga‐doped multicrystalline silicon wafers were intensively studied by means of quasi‐steady‐state photocondcutance lifetime measurement. Results show that as‐grown G...

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Veröffentlicht in:Progress in photovoltaics 2003-06, Vol.11 (4), p.231-236
Hauptverfasser: Dhamrin, M., Hashigami, H., Saitoh, T.
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Hashigami, H.
Saitoh, T.
description Lifetime stability of gallium‐doped multicrystalline silicon wafers has been evaluated under illumination. Quality and stability of the Ga‐doped multicrystalline silicon wafers were intensively studied by means of quasi‐steady‐state photocondcutance lifetime measurement. Results show that as‐grown Ga‐doped multicrystalline silicon wafers have high lifetimes, and no significant degradation was observed under illumination. The Ga‐doped multicrystalline silicon wafers are a promising material for future photovoltaics. Copyright © 2003 John Wiley & Sons, Ltd.
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source Wiley Online Library Journals Frontfile Complete
subjects Applied sciences
defect
degradation
Energy
Exact sciences and technology
Gallium-doped (Ga-doped)
lifetime
light-induced
multicrystalline
Natural energy
Photovoltaic conversion
silicon
Solar cells. Photoelectrochemical cells
Solar energy
title Elimination of light-induced degradation with gallium-doped multicrystalline silicon wafers
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