Electronic and compositional properties of the rear‐side of stoichiometric CuInSe 2 absorbers

In‐depth understanding and subsequent optimization of the contact layers in thin film solar cells are of high importance in order to reduce the amount of nonradiative recombination and thereby improve device performance. In this work, the buried MoSe 2 /CuInSe 2 interface of stoichiometric absorbers...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Progress in photovoltaics 2021-07, Vol.29 (7), p.775-785
Hauptverfasser:	Kameni Boumenou, Christian, Elizabeth, Amala, Babbe, Finn, Debot, Alice, Mönig, Harry, Redinger, Alex
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!