World‐record Cu(In,Ga)Se 2 ‐based thin‐film sub‐module with 17.4% efficiency

World‐record Cu(In,Ga)Se 2 ‐based thin‐film sub‐module with 17.4% efficiency

We report a new certified world‐record efficiency for thin‐film Cu(In,Ga)Se 2 ‐based photovoltaic sub‐modules of 17.4% (aperture area). The record efficiency of the 16 cm 2 , monolithically integrated, sub‐module has been independently confirmed by Fraunhofer ISE. The record device is the result of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Progress in photovoltaics 2012-11, Vol.20 (7), p.851-854
Hauptverfasser: Wallin, Erik, Malm, Ulf, Jarmar, Tobias, Edoff, Olle Lundberg, Marika, Stolt, Lars
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 854
container_issue 7
container_start_page 851
container_title Progress in photovoltaics
container_volume 20
creator Wallin, Erik
Malm, Ulf
Jarmar, Tobias
Edoff, Olle Lundberg, Marika
Stolt, Lars
description We report a new certified world‐record efficiency for thin‐film Cu(In,Ga)Se 2 ‐based photovoltaic sub‐modules of 17.4% (aperture area). The record efficiency of the 16 cm 2 , monolithically integrated, sub‐module has been independently confirmed by Fraunhofer ISE. The record device is the result of extensive co‐optimization of all processing steps. During the optimization process, strong focus has been put on the scalability of processes to cost‐effective mass production, as reflected, for example, in Cu(In,Ga)Se 2 deposition time and substrate temperature. Device manufacturing as well as results of electrical and material characterization is discussed. Copyright © 2012 John Wiley & Sons, Ltd.
doi_str_mv 10.1002/pip.2246
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1002_pip_2246</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1002_pip_2246</sourcerecordid><originalsourceid>FETCH-LOGICAL-c142t-afcacd6f00888b295cf3f248f8ee6332a7fd41b5ab80a8e1ffe8fbbd2760e4b13</originalsourceid><addsrcrecordid>eNotkMtKAzEYhYMoWKvgI2QjVHBqkrklSym1FgourOhuyOX_aWRuJC3SnY_gM_okzqCr852zOIuPkGvO5pwxcd_7fi5EVpyQCWdKJTxX76cjFyIplcrPyUWMH4zxUqpiQrZvXajdz9d3ANsFRxeH2bq9W-nbF6CCDrvRERzd73w7FPR1Q-PBDNh07lAD_fT7HeXlPLuhgOith9YeL8kZ6jrC1X9Oyevjcrt4SjbPq_XiYZNYnol9otFq6wpkTEpphMotpigyiRKgSFOhS3QZN7k2kmkJHBEkGuNEWTDIDE-nZPb3a0MXYwCs-uAbHY4VZ9VooxpsVKON9Bc2TVYb</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>World‐record Cu(In,Ga)Se 2 ‐based thin‐film sub‐module with 17.4% efficiency</title><source>Wiley Online Library All Journals</source><creator>Wallin, Erik ; Malm, Ulf ; Jarmar, Tobias ; Edoff, Olle Lundberg, Marika ; Stolt, Lars</creator><creatorcontrib>Wallin, Erik ; Malm, Ulf ; Jarmar, Tobias ; Edoff, Olle Lundberg, Marika ; Stolt, Lars</creatorcontrib><description>We report a new certified world‐record efficiency for thin‐film Cu(In,Ga)Se 2 ‐based photovoltaic sub‐modules of 17.4% (aperture area). The record efficiency of the 16 cm 2 , monolithically integrated, sub‐module has been independently confirmed by Fraunhofer ISE. The record device is the result of extensive co‐optimization of all processing steps. During the optimization process, strong focus has been put on the scalability of processes to cost‐effective mass production, as reflected, for example, in Cu(In,Ga)Se 2 deposition time and substrate temperature. Device manufacturing as well as results of electrical and material characterization is discussed. Copyright © 2012 John Wiley &amp; Sons, Ltd.</description><identifier>ISSN: 1062-7995</identifier><identifier>EISSN: 1099-159X</identifier><identifier>DOI: 10.1002/pip.2246</identifier><language>eng</language><ispartof>Progress in photovoltaics, 2012-11, Vol.20 (7), p.851-854</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c142t-afcacd6f00888b295cf3f248f8ee6332a7fd41b5ab80a8e1ffe8fbbd2760e4b13</citedby><cites>FETCH-LOGICAL-c142t-afcacd6f00888b295cf3f248f8ee6332a7fd41b5ab80a8e1ffe8fbbd2760e4b13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Wallin, Erik</creatorcontrib><creatorcontrib>Malm, Ulf</creatorcontrib><creatorcontrib>Jarmar, Tobias</creatorcontrib><creatorcontrib>Edoff, Olle Lundberg, Marika</creatorcontrib><creatorcontrib>Stolt, Lars</creatorcontrib><title>World‐record Cu(In,Ga)Se 2 ‐based thin‐film sub‐module with 17.4% efficiency</title><title>Progress in photovoltaics</title><description>We report a new certified world‐record efficiency for thin‐film Cu(In,Ga)Se 2 ‐based photovoltaic sub‐modules of 17.4% (aperture area). The record efficiency of the 16 cm 2 , monolithically integrated, sub‐module has been independently confirmed by Fraunhofer ISE. The record device is the result of extensive co‐optimization of all processing steps. During the optimization process, strong focus has been put on the scalability of processes to cost‐effective mass production, as reflected, for example, in Cu(In,Ga)Se 2 deposition time and substrate temperature. Device manufacturing as well as results of electrical and material characterization is discussed. Copyright © 2012 John Wiley &amp; Sons, Ltd.</description><issn>1062-7995</issn><issn>1099-159X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkMtKAzEYhYMoWKvgI2QjVHBqkrklSym1FgourOhuyOX_aWRuJC3SnY_gM_okzqCr852zOIuPkGvO5pwxcd_7fi5EVpyQCWdKJTxX76cjFyIplcrPyUWMH4zxUqpiQrZvXajdz9d3ANsFRxeH2bq9W-nbF6CCDrvRERzd73w7FPR1Q-PBDNh07lAD_fT7HeXlPLuhgOith9YeL8kZ6jrC1X9Oyevjcrt4SjbPq_XiYZNYnol9otFq6wpkTEpphMotpigyiRKgSFOhS3QZN7k2kmkJHBEkGuNEWTDIDE-nZPb3a0MXYwCs-uAbHY4VZ9VooxpsVKON9Bc2TVYb</recordid><startdate>201211</startdate><enddate>201211</enddate><creator>Wallin, Erik</creator><creator>Malm, Ulf</creator><creator>Jarmar, Tobias</creator><creator>Edoff, Olle Lundberg, Marika</creator><creator>Stolt, Lars</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201211</creationdate><title>World‐record Cu(In,Ga)Se 2 ‐based thin‐film sub‐module with 17.4% efficiency</title><author>Wallin, Erik ; Malm, Ulf ; Jarmar, Tobias ; Edoff, Olle Lundberg, Marika ; Stolt, Lars</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c142t-afcacd6f00888b295cf3f248f8ee6332a7fd41b5ab80a8e1ffe8fbbd2760e4b13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wallin, Erik</creatorcontrib><creatorcontrib>Malm, Ulf</creatorcontrib><creatorcontrib>Jarmar, Tobias</creatorcontrib><creatorcontrib>Edoff, Olle Lundberg, Marika</creatorcontrib><creatorcontrib>Stolt, Lars</creatorcontrib><collection>CrossRef</collection><jtitle>Progress in photovoltaics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wallin, Erik</au><au>Malm, Ulf</au><au>Jarmar, Tobias</au><au>Edoff, Olle Lundberg, Marika</au><au>Stolt, Lars</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>World‐record Cu(In,Ga)Se 2 ‐based thin‐film sub‐module with 17.4% efficiency</atitle><jtitle>Progress in photovoltaics</jtitle><date>2012-11</date><risdate>2012</risdate><volume>20</volume><issue>7</issue><spage>851</spage><epage>854</epage><pages>851-854</pages><issn>1062-7995</issn><eissn>1099-159X</eissn><abstract>We report a new certified world‐record efficiency for thin‐film Cu(In,Ga)Se 2 ‐based photovoltaic sub‐modules of 17.4% (aperture area). The record efficiency of the 16 cm 2 , monolithically integrated, sub‐module has been independently confirmed by Fraunhofer ISE. The record device is the result of extensive co‐optimization of all processing steps. During the optimization process, strong focus has been put on the scalability of processes to cost‐effective mass production, as reflected, for example, in Cu(In,Ga)Se 2 deposition time and substrate temperature. Device manufacturing as well as results of electrical and material characterization is discussed. Copyright © 2012 John Wiley &amp; Sons, Ltd.</abstract><doi>10.1002/pip.2246</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1062-7995
ispartof Progress in photovoltaics, 2012-11, Vol.20 (7), p.851-854
issn 1062-7995
1099-159X
language eng
recordid cdi_crossref_primary_10_1002_pip_2246
source Wiley Online Library All Journals
title World‐record Cu(In,Ga)Se 2 ‐based thin‐film sub‐module with 17.4% efficiency
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T04%3A55%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=World%E2%80%90record%20Cu(In,Ga)Se%202%20%E2%80%90based%20thin%E2%80%90film%20sub%E2%80%90module%20with%2017.4%25%20efficiency&rft.jtitle=Progress%20in%20photovoltaics&rft.au=Wallin,%20Erik&rft.date=2012-11&rft.volume=20&rft.issue=7&rft.spage=851&rft.epage=854&rft.pages=851-854&rft.issn=1062-7995&rft.eissn=1099-159X&rft_id=info:doi/10.1002/pip.2246&rft_dat=%3Ccrossref%3E10_1002_pip_2246%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true