Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies
ABSTRACT The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low‐cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained us...
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| Veröffentlicht in: | Progress in photovoltaics 2013-08, Vol.21 (5), p.894-899 |
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| creator | Tablero, C. |
| description | ABSTRACT
The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low‐cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange–correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto‐electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. Copyright © 2012 John Wiley & Sons, Ltd.
From first principles, the electronic properties of the isoelectronic substitution of S by O in Cu3BiS3 have been obtained. The acceptor energy levels in the gap form a band in the alloying limit. Using the first‐principles results, we have estimated the maximum efficiency of this photovoltaic absorber material. |
| doi_str_mv | 10.1002/pip.2173 |
| format | Article |
| fullrecord | <record><control><sourceid>istex_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_pip_2173</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_SQF1D7BR_Z</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2933-69b84dcaf3545e1a9b0e1d134fed01bd5c298ae6da0fa163831db01c78aece9b3</originalsourceid><addsrcrecordid>eNp1kEFLAzEQhYMoWKvgT8jRy2qy6e423my1tVBstUrFS8hmEzq62yy7aW1vXv2b_hKzVAQPHh7zGL55DA-hU0rOKSHhRQnleUgTtodalHAe0Ig_7zc-DoOE8-gQHdX1KyE06fK4hdbThXV2bXMnQWFZljko6cAusTV4EmS21Bmeg3OgFnoJTgf91dfHJ_Pqwaxxl9hUtsAFqMrWypY-pqz8WeVA19hZXMgNFKsCa2NAgV561cfowMi81ic_s42eBjeP_dtgPBmO-lfjQIWcsSDmabeTKWlY1Ik0lTwlmmaUdYzOCE2zyGNdqeNMEiNpzLqMZimhKvFLpXnK2uhsl9s8V1faiLKCQlZbQYlo-hK-L9H05dFgh75Drrf_cmI6mv7loXZ688vL6k3ECUsiMb8bitn9gF4nvQfxwr4B3WaBQA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies</title><source>Wiley Journals</source><creator>Tablero, C.</creator><creatorcontrib>Tablero, C.</creatorcontrib><description>ABSTRACT
The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low‐cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange–correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto‐electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. Copyright © 2012 John Wiley & Sons, Ltd.
From first principles, the electronic properties of the isoelectronic substitution of S by O in Cu3BiS3 have been obtained. The acceptor energy levels in the gap form a band in the alloying limit. Using the first‐principles results, we have estimated the maximum efficiency of this photovoltaic absorber material.</description><identifier>ISSN: 1062-7995</identifier><identifier>EISSN: 1099-159X</identifier><identifier>DOI: 10.1002/pip.2173</identifier><language>eng</language><publisher>Blackwell Publishing Ltd</publisher><subject>electronic structure ; impurities ; ionization levels ; photovoltaics ; semiconductors</subject><ispartof>Progress in photovoltaics, 2013-08, Vol.21 (5), p.894-899</ispartof><rights>Copyright © 2012 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2933-69b84dcaf3545e1a9b0e1d134fed01bd5c298ae6da0fa163831db01c78aece9b3</citedby><cites>FETCH-LOGICAL-c2933-69b84dcaf3545e1a9b0e1d134fed01bd5c298ae6da0fa163831db01c78aece9b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpip.2173$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpip.2173$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Tablero, C.</creatorcontrib><title>Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies</title><title>Progress in photovoltaics</title><addtitle>Prog. Photovolt: Res. Appl</addtitle><description>ABSTRACT
The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low‐cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange–correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto‐electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. Copyright © 2012 John Wiley & Sons, Ltd.
From first principles, the electronic properties of the isoelectronic substitution of S by O in Cu3BiS3 have been obtained. The acceptor energy levels in the gap form a band in the alloying limit. Using the first‐principles results, we have estimated the maximum efficiency of this photovoltaic absorber material.</description><subject>electronic structure</subject><subject>impurities</subject><subject>ionization levels</subject><subject>photovoltaics</subject><subject>semiconductors</subject><issn>1062-7995</issn><issn>1099-159X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLAzEQhYMoWKvgT8jRy2qy6e423my1tVBstUrFS8hmEzq62yy7aW1vXv2b_hKzVAQPHh7zGL55DA-hU0rOKSHhRQnleUgTtodalHAe0Ig_7zc-DoOE8-gQHdX1KyE06fK4hdbThXV2bXMnQWFZljko6cAusTV4EmS21Bmeg3OgFnoJTgf91dfHJ_Pqwaxxl9hUtsAFqMrWypY-pqz8WeVA19hZXMgNFKsCa2NAgV561cfowMi81ic_s42eBjeP_dtgPBmO-lfjQIWcsSDmabeTKWlY1Ik0lTwlmmaUdYzOCE2zyGNdqeNMEiNpzLqMZimhKvFLpXnK2uhsl9s8V1faiLKCQlZbQYlo-hK-L9H05dFgh75Drrf_cmI6mv7loXZ688vL6k3ECUsiMb8bitn9gF4nvQfxwr4B3WaBQA</recordid><startdate>201308</startdate><enddate>201308</enddate><creator>Tablero, C.</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201308</creationdate><title>Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies</title><author>Tablero, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2933-69b84dcaf3545e1a9b0e1d134fed01bd5c298ae6da0fa163831db01c78aece9b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>electronic structure</topic><topic>impurities</topic><topic>ionization levels</topic><topic>photovoltaics</topic><topic>semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tablero, C.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Progress in photovoltaics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tablero, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies</atitle><jtitle>Progress in photovoltaics</jtitle><addtitle>Prog. Photovolt: Res. Appl</addtitle><date>2013-08</date><risdate>2013</risdate><volume>21</volume><issue>5</issue><spage>894</spage><epage>899</epage><pages>894-899</pages><issn>1062-7995</issn><eissn>1099-159X</eissn><abstract>ABSTRACT
The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low‐cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange–correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto‐electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. Copyright © 2012 John Wiley & Sons, Ltd.
From first principles, the electronic properties of the isoelectronic substitution of S by O in Cu3BiS3 have been obtained. The acceptor energy levels in the gap form a band in the alloying limit. Using the first‐principles results, we have estimated the maximum efficiency of this photovoltaic absorber material.</abstract><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pip.2173</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| issn | 1062-7995 1099-159X |
| language | eng |
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| source | Wiley Journals |
| subjects | electronic structure impurities ionization levels photovoltaics semiconductors |
| title | Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T07%3A30%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photovoltaic%20application%20of%20O-doped%20Wittichenite-Cu%E2%80%893%E2%80%89BiS%E2%80%893:%20from%20microscopic%20properties%20to%20maximum%20efficiencies&rft.jtitle=Progress%20in%20photovoltaics&rft.au=Tablero,%20C.&rft.date=2013-08&rft.volume=21&rft.issue=5&rft.spage=894&rft.epage=899&rft.pages=894-899&rft.issn=1062-7995&rft.eissn=1099-159X&rft_id=info:doi/10.1002/pip.2173&rft_dat=%3Cistex_cross%3Eark_67375_WNG_SQF1D7BR_Z%3C/istex_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |