Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors

In this article, a gate recessed AlGaN/GaN high electron mobility transistor (HEMT) was developed using 4‐in. compound semiconductor process. We designed and fabricated four types of AlGaN/GaN HEMT to characterize the performance of devices. The effects of the gate recess depth and the device dimens...

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Veröffentlicht in:	Microwave and optical technology letters 2012-09, Vol.54 (9), p.2103-2106
Hauptverfasser:	Lee, Jong-Min, Yoon, Hyung-Sup, Min, Byoung-Gue, Mun, Jae-Kyoung, Nam, Eunsoo
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN GaN gate recess high electron mobility transistor pulse
Online-Zugang:	Volltext
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