Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model
In this article, we demonstrate how the constitutive relations for the nonlinear modeling of hetro‐junction bipolar transistors (HBTs) can be based on an artificial neural network (ANN) model representation.. The model is implemented using a commercial microwave simulator, and has been validated by...
Gespeichert in:
| Veröffentlicht in: | International journal of RF and microwave computer-aided engineering 2005-03, Vol.15 (2), p.203-209 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 209 |
|---|---|
| container_issue | 2 |
| container_start_page | 203 |
| container_title | International journal of RF and microwave computer-aided engineering |
| container_volume | 15 |
| creator | Taher, H. Schreurs, D. Nauwelaers, B. |
| description | In this article, we demonstrate how the constitutive relations for the nonlinear modeling of hetro‐junction bipolar transistors (HBTs) can be based on an artificial neural network (ANN) model representation.. The model is implemented using a commercial microwave simulator, and has been validated by DC and nonlinear measurements. Excellent agreement is obtained as compared with the results of the DC measurements, and the model predicts well the higher‐order harmonics in a single tone test.. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005. |
| doi_str_mv | 10.1002/mmce.20069 |
| format | Article |
| fullrecord | <record><control><sourceid>wiley_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_mmce_20069</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>MMCE20069</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3479-c97dcbad837967a5c0c8998afdc18e637f5480b1bc726126ea511abc498ef7523</originalsourceid><addsrcrecordid>eNp9kMtOwzAURC0EEqWw4Qu8RkrrRxLHyxIgBbUF1PLYWY5jI0MeyE6B_j1pAyxZ3dHMmbsYAE4xGmGEyLiqlB4RhGK-BwYYcR6gkD3v73QchISjQ3Dk_StCXUboANylTe1b265b-6Gh06VsbedA0zhYN3Vpay0drJpCd_IFNgYu7XhpMw2n5ysP137ryhpOFoueOgYHRpZen_zcIXi4ulyl02B2m12nk1mgaMh4oDgrVC6LhDIeMxkppBLOE2kKhRMdU2aiMEE5zhUjMSaxlhHGMlchT7RhEaFDcNb_Va7x3mkj3p2tpNsIjMR2C7HdQuy26GDcw5-21Jt_SDGfp5e_naDvWN_qr7-OdG8iZpRF4mmRiUdyf0FuZonI6Df-x3CA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Taher, H. ; Schreurs, D. ; Nauwelaers, B.</creator><creatorcontrib>Taher, H. ; Schreurs, D. ; Nauwelaers, B.</creatorcontrib><description>In this article, we demonstrate how the constitutive relations for the nonlinear modeling of hetro‐junction bipolar transistors (HBTs) can be based on an artificial neural network (ANN) model representation.. The model is implemented using a commercial microwave simulator, and has been validated by DC and nonlinear measurements. Excellent agreement is obtained as compared with the results of the DC measurements, and the model predicts well the higher‐order harmonics in a single tone test.. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.</description><identifier>ISSN: 1096-4290</identifier><identifier>EISSN: 1099-047X</identifier><identifier>DOI: 10.1002/mmce.20069</identifier><language>eng</language><publisher>Hoboken: Wiley Subscription Services, Inc., A Wiley Company</publisher><subject>hetro-junction bipolar transistor ; large signal ; microwave transistor ; neural network ; nonlinear modeling</subject><ispartof>International journal of RF and microwave computer-aided engineering, 2005-03, Vol.15 (2), p.203-209</ispartof><rights>Copyright © 2005 Wiley Periodicals, Inc.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3479-c97dcbad837967a5c0c8998afdc18e637f5480b1bc726126ea511abc498ef7523</citedby><cites>FETCH-LOGICAL-c3479-c97dcbad837967a5c0c8998afdc18e637f5480b1bc726126ea511abc498ef7523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fmmce.20069$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fmmce.20069$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Taher, H.</creatorcontrib><creatorcontrib>Schreurs, D.</creatorcontrib><creatorcontrib>Nauwelaers, B.</creatorcontrib><title>Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model</title><title>International journal of RF and microwave computer-aided engineering</title><addtitle>Int J RF and Microwave Comp Aid Eng</addtitle><description>In this article, we demonstrate how the constitutive relations for the nonlinear modeling of hetro‐junction bipolar transistors (HBTs) can be based on an artificial neural network (ANN) model representation.. The model is implemented using a commercial microwave simulator, and has been validated by DC and nonlinear measurements. Excellent agreement is obtained as compared with the results of the DC measurements, and the model predicts well the higher‐order harmonics in a single tone test.. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.</description><subject>hetro-junction bipolar transistor</subject><subject>large signal</subject><subject>microwave transistor</subject><subject>neural network</subject><subject>nonlinear modeling</subject><issn>1096-4290</issn><issn>1099-047X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kMtOwzAURC0EEqWw4Qu8RkrrRxLHyxIgBbUF1PLYWY5jI0MeyE6B_j1pAyxZ3dHMmbsYAE4xGmGEyLiqlB4RhGK-BwYYcR6gkD3v73QchISjQ3Dk_StCXUboANylTe1b265b-6Gh06VsbedA0zhYN3Vpay0drJpCd_IFNgYu7XhpMw2n5ysP137ryhpOFoueOgYHRpZen_zcIXi4ulyl02B2m12nk1mgaMh4oDgrVC6LhDIeMxkppBLOE2kKhRMdU2aiMEE5zhUjMSaxlhHGMlchT7RhEaFDcNb_Va7x3mkj3p2tpNsIjMR2C7HdQuy26GDcw5-21Jt_SDGfp5e_naDvWN_qr7-OdG8iZpRF4mmRiUdyf0FuZonI6Df-x3CA</recordid><startdate>200503</startdate><enddate>200503</enddate><creator>Taher, H.</creator><creator>Schreurs, D.</creator><creator>Nauwelaers, B.</creator><general>Wiley Subscription Services, Inc., A Wiley Company</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200503</creationdate><title>Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model</title><author>Taher, H. ; Schreurs, D. ; Nauwelaers, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3479-c97dcbad837967a5c0c8998afdc18e637f5480b1bc726126ea511abc498ef7523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>hetro-junction bipolar transistor</topic><topic>large signal</topic><topic>microwave transistor</topic><topic>neural network</topic><topic>nonlinear modeling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Taher, H.</creatorcontrib><creatorcontrib>Schreurs, D.</creatorcontrib><creatorcontrib>Nauwelaers, B.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>International journal of RF and microwave computer-aided engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Taher, H.</au><au>Schreurs, D.</au><au>Nauwelaers, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model</atitle><jtitle>International journal of RF and microwave computer-aided engineering</jtitle><addtitle>Int J RF and Microwave Comp Aid Eng</addtitle><date>2005-03</date><risdate>2005</risdate><volume>15</volume><issue>2</issue><spage>203</spage><epage>209</epage><pages>203-209</pages><issn>1096-4290</issn><eissn>1099-047X</eissn><abstract>In this article, we demonstrate how the constitutive relations for the nonlinear modeling of hetro‐junction bipolar transistors (HBTs) can be based on an artificial neural network (ANN) model representation.. The model is implemented using a commercial microwave simulator, and has been validated by DC and nonlinear measurements. Excellent agreement is obtained as compared with the results of the DC measurements, and the model predicts well the higher‐order harmonics in a single tone test.. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.</abstract><cop>Hoboken</cop><pub>Wiley Subscription Services, Inc., A Wiley Company</pub><doi>10.1002/mmce.20069</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1096-4290 |
| ispartof | International journal of RF and microwave computer-aided engineering, 2005-03, Vol.15 (2), p.203-209 |
| issn | 1096-4290 1099-047X |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_mmce_20069 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | hetro-junction bipolar transistor large signal microwave transistor neural network nonlinear modeling |
| title | Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T01%3A40%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wiley_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Constitutive%20relations%20for%20nonlinear%20modeling%20of%20Si/SiGe%20HBTs%20using%20an%20ANN%20model&rft.jtitle=International%20journal%20of%20RF%20and%20microwave%20computer-aided%20engineering&rft.au=Taher,%20H.&rft.date=2005-03&rft.volume=15&rft.issue=2&rft.spage=203&rft.epage=209&rft.pages=203-209&rft.issn=1096-4290&rft.eissn=1099-047X&rft_id=info:doi/10.1002/mmce.20069&rft_dat=%3Cwiley_cross%3EMMCE20069%3C/wiley_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |