Novel technique for estimating metal semiconductor field effect transitor parasitics

A novel technique is developed for extracting the gate resistance, parasitic inductances, and pad capacitances for metal semiconductor field effect transistor devices. The parameters are extracted from two sets of S‐parameter measurements: cold measurements and pinch‐off measurements. The proposed t...

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Bibliographische Detailangaben

Veröffentlicht in:	International journal of RF and microwave computer-aided engineering 2003-01, Vol.13 (1), p.62-73
Hauptverfasser:	Khalaf, Yaser A., Riad, Sedki M.
Format:	Artikel
Sprache:	eng
Schlagworte:	characterization extrinsic parasitics MES field effect transistor modeling optimization
Online-Zugang:	Volltext
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