Electrodeposition of tungsten and molybdenum carbide onto the surfaces of disperse dielectric and semiconductor materials: Elektrolytische Abscheidung von Wolfram und Molybdän auf Oberflächen von Nichtleiter‐ und Halbleiterwerkstoffen

The systems suitable for a high‐temperature electrochemical synthesis on the surfaces of diamond, boron nitride, and silicon and boron carbides were selected on the basis of the thermodynamic analysis of the reactions of dielectrics and semiconductors with ionic melts and the study of their electrochemical behavior. Electroplating of the grains of dielectrics and semiconductors with molybdenum carbide favors the increase in their breaking load and wettability and in the efficiency of tools. Thermodynamic calculations showed that the most energy favorable process for boron nitride is its oxidation to gaseous nitrogen and boron metaborate or oxide. A compound of an element of group VI and carbon will be presumably reduced to this element in the pure state or to its oxide of an intermediate oxidation state. The most energy favorable process for silicon and boron carbides will be their oxidation to a metasilicate (metaborate) or silicon (boron) oxide. A compound of an element of group VI will be also presumably reduced to the elements in the pure state or in the form of an intermediate oxide.