Analysis of parasitic quantum effects in classical CMOS circuits

In the mesoscopic regime, the MOS device performance is affected by gate‐induced quantization effects leading to a loss of transconductance and threshold voltage shift and gate leakage tunnelling currents degrading the overall device performance. We discuss the expected impact of quantum effects in...

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Veröffentlicht in:	International journal of numerical modelling 2005-07, Vol.18 (4), p.313-323
Hauptverfasser:	Felgenhauer, F., Begoin, M., Mathis, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	circuit simulation CMOS-circuits quantum effects
Online-Zugang:	Volltext
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