A novel β ‐Ga 2 O 3 HEMT with f T of 166 GHz and X‐band P OUT of 2.91 W/mm

In this paper, a novel β ‐Ga 2 O 3 high electron mobility transistor (BGO‐HEMT) with record‐high intrinsic unity current gain cut‐off frequency ( f T ) of 166 GHz and RF output power ( P OUT ) of 2.91 W/mm is demonstrated through 2D device simulations using an appropriate negative differential mobil...

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Veröffentlicht in:	International journal of numerical modelling 2021-01, Vol.34 (1)
Hauptverfasser:	Singh, Rajan, Lenka, Trupti Ranjan, Velpula, Ravi Teja, Jain, Barsha, Bui, Ha Quoc Thang, Nguyen, Hieu Pham Trung
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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