Development of high-frequency SiC-MESFETs

With rapid growth of mobile communications represented by portable telephones, further increases in the output of high‐frequency power transistors for the base stations are required. Also, in the fields of satellite communications and radar, realization of high‐power transistors replacing electron t...

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Veröffentlicht in:	Electronics & communications in Japan. Part 2, Electronics Electronics, 2003-11, Vol.86 (11), p.1-10
Hauptverfasser:	Arai, Manabu, Honda, Hirotake, Ono, Shuichi, Sawazaki, Hiroshi, Ogata, Makoto
Format:	Artikel
Sprache:	eng
Schlagworte:	high frequency high output power MESFET output power density SiC
Online-Zugang:	Volltext
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