The first monomeric, volatile bis-azide single-source precursor to Gallium nitride thin films
Group III nitrides are strong candidates for use in light emitting diodes and semiconductor lasers. There are, though, a number of shortcomings of currently available precursors. There is a need for less toxic and pyrophoric precursors that can be used for low temperature deposition. The single sour...
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| Veröffentlicht in: | Chemical vapor deposition 1996-03, Vol.2 (2), p.51-55 |
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| container_end_page | 55 |
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| container_issue | 2 |
| container_start_page | 51 |
| container_title | Chemical vapor deposition |
| container_volume | 2 |
| creator | Miehr, Alexander Ambacher, Oliver Rieger, Walter Metzger, Thomas Born, Eberhard Fischer, Roland A. |
| description | Group III nitrides are strong candidates for use in light emitting diodes and semiconductor lasers. There are, though, a number of shortcomings of currently available precursors. There is a need for less toxic and pyrophoric precursors that can be used for low temperature deposition. The single source nitrogen‐rich GaN precursor reported here, building on the concept of intramolecularly based adduct stabilization, shows considerable promise for producing high quality layers. |
| doi_str_mv | 10.1002/cvde.19960020206 |
| format | Article |
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| identifier | ISSN: 0948-1907 |
| ispartof | Chemical vapor deposition, 1996-03, Vol.2 (2), p.51-55 |
| issn | 0948-1907 1521-3862 |
| language | eng |
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| source | Access via Wiley Online Library |
| title | The first monomeric, volatile bis-azide single-source precursor to Gallium nitride thin films |
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