The first monomeric, volatile bis-azide single-source precursor to Gallium nitride thin films

Group III nitrides are strong candidates for use in light emitting diodes and semiconductor lasers. There are, though, a number of shortcomings of currently available precursors. There is a need for less toxic and pyrophoric precursors that can be used for low temperature deposition. The single source nitrogen‐rich GaN precursor reported here, building on the concept of intramolecularly based adduct stabilization, shows considerable promise for producing high quality layers.