Optical absorption behaviour of magnesium-implanted GaAs
Optical absorption spectra of magnesium implanted GaAs single crystals are measured in the photon energy range below the fundamental absorption edge. It is found that the absorption coefficient increases with increasing fluence up to a saturation value of about 5 · 104 4 cm−1 at 1.36 eV. The results...
Gespeichert in:
| Veröffentlicht in: | Crystal research and technology (1979) 1989-06, Vol.24 (6), p.625-628 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 628 |
|---|---|
| container_issue | 6 |
| container_start_page | 625 |
| container_title | Crystal research and technology (1979) |
| container_volume | 24 |
| creator | Hörig, W. Bouamama, Kh Neumann, H. Nobes, M. J. |
| description | Optical absorption spectra of magnesium implanted GaAs single crystals are measured in the photon energy range below the fundamental absorption edge. It is found that the absorption coefficient increases with increasing fluence up to a saturation value of about 5 · 104 4 cm−1 at 1.36 eV. The results are compared with optical measurements on GaAs single crystals implanted with other ions.
Optische Absorptionsspektren von magnesium‐implantierten GaAs‐Einkristallen wurden im Photonenenergiebereich unterhalb der fundamentalen Absorptionskante gemessen. Es zeigte sich, daß der Absorptionskoeffizient mit wachsender Dosis bis zu einem Sättigungswert von etwa 5 · 104 cm−1 bei 1.36 eV ansteigt. Die Ergebnisse werden mit optischen Messungen an mit anderen Ionen implantierten GaAs‐Einkristallen verglichen. |
| doi_str_mv | 10.1002/crat.2170240613 |
| format | Article |
| fullrecord | <record><control><sourceid>istex_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_crat_2170240613</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_WB4KKMG1_0</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3603-4376f3b8f87f2648faddc0acf8808e50364c77ba073a5efec0fad70c5033d3a83</originalsourceid><addsrcrecordid>eNqFjz1PwzAQhi0EEqUws2ZgDT3HTuyKqVQQUAuVUFFH6-LYEMiX7BTovydVURET05107_OeHkLOKVxSgGikHXaXERUQcUgoOyADGkc05CDGh2QAEYtCygCOyYn3bwAwTng0IHLRdoXGMsDMN67fmzrIzCt-FM3aBY0NKnypjS_WVVhUbYl1Z_IgxYk_JUcWS2_OfuaQPN_eLKd34XyR3k8n81CzBFjImUgsy6SVwkYJlxbzXANqKyVIEwNLuBYiQxAMY2ONhj4hQPcXljOUbEhGu17tGu-dsap1RYVuoyiorbjaiqtf8Z642BEt-t7MOqx14fdYEgsZx7yPXe1in0VpNv-1qunTZPnnSbijC9-Zrz2N7l0lgolYrR5Ttbrms9lDShWwbylUeV4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Optical absorption behaviour of magnesium-implanted GaAs</title><source>Access via Wiley Online Library</source><creator>Hörig, W. ; Bouamama, Kh ; Neumann, H. ; Nobes, M. J.</creator><creatorcontrib>Hörig, W. ; Bouamama, Kh ; Neumann, H. ; Nobes, M. J.</creatorcontrib><description>Optical absorption spectra of magnesium implanted GaAs single crystals are measured in the photon energy range below the fundamental absorption edge. It is found that the absorption coefficient increases with increasing fluence up to a saturation value of about 5 · 104 4 cm−1 at 1.36 eV. The results are compared with optical measurements on GaAs single crystals implanted with other ions.
Optische Absorptionsspektren von magnesium‐implantierten GaAs‐Einkristallen wurden im Photonenenergiebereich unterhalb der fundamentalen Absorptionskante gemessen. Es zeigte sich, daß der Absorptionskoeffizient mit wachsender Dosis bis zu einem Sättigungswert von etwa 5 · 104 cm−1 bei 1.36 eV ansteigt. Die Ergebnisse werden mit optischen Messungen an mit anderen Ionen implantierten GaAs‐Einkristallen verglichen.</description><identifier>ISSN: 0232-1300</identifier><identifier>EISSN: 1521-4079</identifier><identifier>DOI: 10.1002/crat.2170240613</identifier><identifier>CODEN: CRTEDF</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Doping and impurity implantation in iii-v and ii-vi semiconductors ; Exact sciences and technology ; Physics ; Structure of solids and liquids; crystallography</subject><ispartof>Crystal research and technology (1979), 1989-06, Vol.24 (6), p.625-628</ispartof><rights>Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA</rights><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3603-4376f3b8f87f2648faddc0acf8808e50364c77ba073a5efec0fad70c5033d3a83</citedby><cites>FETCH-LOGICAL-c3603-4376f3b8f87f2648faddc0acf8808e50364c77ba073a5efec0fad70c5033d3a83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fcrat.2170240613$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fcrat.2170240613$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6578554$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hörig, W.</creatorcontrib><creatorcontrib>Bouamama, Kh</creatorcontrib><creatorcontrib>Neumann, H.</creatorcontrib><creatorcontrib>Nobes, M. J.</creatorcontrib><title>Optical absorption behaviour of magnesium-implanted GaAs</title><title>Crystal research and technology (1979)</title><addtitle>Cryst. Res. Technol</addtitle><description>Optical absorption spectra of magnesium implanted GaAs single crystals are measured in the photon energy range below the fundamental absorption edge. It is found that the absorption coefficient increases with increasing fluence up to a saturation value of about 5 · 104 4 cm−1 at 1.36 eV. The results are compared with optical measurements on GaAs single crystals implanted with other ions.
Optische Absorptionsspektren von magnesium‐implantierten GaAs‐Einkristallen wurden im Photonenenergiebereich unterhalb der fundamentalen Absorptionskante gemessen. Es zeigte sich, daß der Absorptionskoeffizient mit wachsender Dosis bis zu einem Sättigungswert von etwa 5 · 104 cm−1 bei 1.36 eV ansteigt. Die Ergebnisse werden mit optischen Messungen an mit anderen Ionen implantierten GaAs‐Einkristallen verglichen.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Doping and impurity implantation in iii-v and ii-vi semiconductors</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0232-1300</issn><issn>1521-4079</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqFjz1PwzAQhi0EEqUws2ZgDT3HTuyKqVQQUAuVUFFH6-LYEMiX7BTovydVURET05107_OeHkLOKVxSgGikHXaXERUQcUgoOyADGkc05CDGh2QAEYtCygCOyYn3bwAwTng0IHLRdoXGMsDMN67fmzrIzCt-FM3aBY0NKnypjS_WVVhUbYl1Z_IgxYk_JUcWS2_OfuaQPN_eLKd34XyR3k8n81CzBFjImUgsy6SVwkYJlxbzXANqKyVIEwNLuBYiQxAMY2ONhj4hQPcXljOUbEhGu17tGu-dsap1RYVuoyiorbjaiqtf8Z642BEt-t7MOqx14fdYEgsZx7yPXe1in0VpNv-1qunTZPnnSbijC9-Zrz2N7l0lgolYrR5Ttbrms9lDShWwbylUeV4</recordid><startdate>198906</startdate><enddate>198906</enddate><creator>Hörig, W.</creator><creator>Bouamama, Kh</creator><creator>Neumann, H.</creator><creator>Nobes, M. J.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>198906</creationdate><title>Optical absorption behaviour of magnesium-implanted GaAs</title><author>Hörig, W. ; Bouamama, Kh ; Neumann, H. ; Nobes, M. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3603-4376f3b8f87f2648faddc0acf8808e50364c77ba073a5efec0fad70c5033d3a83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Doping and impurity implantation in iii-v and ii-vi semiconductors</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hörig, W.</creatorcontrib><creatorcontrib>Bouamama, Kh</creatorcontrib><creatorcontrib>Neumann, H.</creatorcontrib><creatorcontrib>Nobes, M. J.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Crystal research and technology (1979)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hörig, W.</au><au>Bouamama, Kh</au><au>Neumann, H.</au><au>Nobes, M. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical absorption behaviour of magnesium-implanted GaAs</atitle><jtitle>Crystal research and technology (1979)</jtitle><addtitle>Cryst. Res. Technol</addtitle><date>1989-06</date><risdate>1989</risdate><volume>24</volume><issue>6</issue><spage>625</spage><epage>628</epage><pages>625-628</pages><issn>0232-1300</issn><eissn>1521-4079</eissn><coden>CRTEDF</coden><abstract>Optical absorption spectra of magnesium implanted GaAs single crystals are measured in the photon energy range below the fundamental absorption edge. It is found that the absorption coefficient increases with increasing fluence up to a saturation value of about 5 · 104 4 cm−1 at 1.36 eV. The results are compared with optical measurements on GaAs single crystals implanted with other ions.
Optische Absorptionsspektren von magnesium‐implantierten GaAs‐Einkristallen wurden im Photonenenergiebereich unterhalb der fundamentalen Absorptionskante gemessen. Es zeigte sich, daß der Absorptionskoeffizient mit wachsender Dosis bis zu einem Sättigungswert von etwa 5 · 104 cm−1 bei 1.36 eV ansteigt. Die Ergebnisse werden mit optischen Messungen an mit anderen Ionen implantierten GaAs‐Einkristallen verglichen.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/crat.2170240613</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0232-1300 |
| ispartof | Crystal research and technology (1979), 1989-06, Vol.24 (6), p.625-628 |
| issn | 0232-1300 1521-4079 |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_crat_2170240613 |
| source | Access via Wiley Online Library |
| subjects | Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography |
| title | Optical absorption behaviour of magnesium-implanted GaAs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T19%3A58%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical%20absorption%20behaviour%20of%20magnesium-implanted%20GaAs&rft.jtitle=Crystal%20research%20and%20technology%20(1979)&rft.au=H%C3%B6rig,%20W.&rft.date=1989-06&rft.volume=24&rft.issue=6&rft.spage=625&rft.epage=628&rft.pages=625-628&rft.issn=0232-1300&rft.eissn=1521-4079&rft.coden=CRTEDF&rft_id=info:doi/10.1002/crat.2170240613&rft_dat=%3Cistex_cross%3Eark_67375_WNG_WB4KKMG1_0%3C/istex_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |