Doping of PbTe with Ga during Growth from the Vapour Phase

In the present paper a method for doping of PbTe with Ga during crystal growth from the vapour phase is presented. The galvanomagnetic and photoelectric properties of the produced material are compared with results of other techniques and the equivalence of these physical properties is proved. Furth...

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Veröffentlicht in:	Crystal research and technology (1979) 1986-10, Vol.21 (10), p.1273-1280
Hauptverfasser:	Möllmann, K.-P., Siche, D., Zajnudinov, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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