Numerical Simulation of Thermal Performance of GaAs‐Metal‐Organic Chemical Vapor Deposition Reactor Based on 36 × 4 inches’ Wafers

Currently, limited studies on 3D models based on thermal and flow fields have investigated the effects of geometric and process parameters on the metal–organic chemical vapor deposition (MOCVD) process in large square reactors under severe temperatures. To address these problems, this study conducts numerical simulations and experiments for a large square Gallium Arsenide (GaAs) MOCVD reactor. A 3D model based on the MOCVD reactor coupled with fluid flow and heat transfer is developed to analyze the influence of the heating mode and process parameters on the temperature uniformity and heating efficiency. At 800 °C, the heating time is decreased less than 300 s, and a temperature uniformity of 7.9 °C is achieved, thereby realizing improved uniformity and excellent reactor performance. The use of cross and lateral lamps promote the controllability of the reactor temperature. As the gas flow rate increases, the velocity at the edge of the reactor increases, which induces the difference in the heat transfer coefficient between the center and edge increased. The variations in the gas composition influence the heating rate and temperature uniformity. The results of this study are useful for the design of heating modules in MOCVD reactors. A 3D model based on an metal–organic chemical vapor deposition reactor, coupled with fluid flow and heat transfer is developed to analyze the influence of the heating mode and process parameters on the temperature uniformity and heating efficiency. The use of cross and lateral lamps, optimized inlet gas flow and process gas species fraction can influence the heating rates and temperature uniformity.