Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible

In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the pr...

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Veröffentlicht in:	Crystal research and technology (1979) 2020-08, Vol.55 (8), p.n/a
Hauptverfasser:	Lorenz‐Meyer, M. Nicolai L., Menzel, Robert, Dadzis, Kaspars, Nikiforova, Angelina, Riemann, Helge
Format:	Artikel
Sprache:	eng
Schlagworte:	control engineering lumped parameter model mathematical modeling parameter estimation silicon crystal growth
Online-Zugang:	Volltext
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