Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible
In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the pr...
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Veröffentlicht in: | Crystal research and technology (1979) 2020-08, Vol.55 (8), p.n/a |
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creator | Lorenz‐Meyer, M. Nicolai L. Menzel, Robert Dadzis, Kaspars Nikiforova, Angelina Riemann, Helge |
description | In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached.
Herein, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the physical conditions of the process. Experiments are conducted to identify the model parameters and the physical consistency is verified using simulation studies. |
doi_str_mv | 10.1002/crat.202000044 |
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Herein, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the physical conditions of the process. Experiments are conducted to identify the model parameters and the physical consistency is verified using simulation studies.</description><identifier>ISSN: 0232-1300</identifier><identifier>EISSN: 1521-4079</identifier><identifier>DOI: 10.1002/crat.202000044</identifier><language>eng</language><subject>control engineering ; lumped parameter model ; mathematical modeling ; parameter estimation ; silicon crystal growth</subject><ispartof>Crystal research and technology (1979), 2020-08, Vol.55 (8), p.n/a</ispartof><rights>2020 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2844-b9784ed0da7fb7c945dd33a0782bea5b5a7a875bae42cd056f953775067feaa13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fcrat.202000044$$EPDF$$P50$$Gwiley$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fcrat.202000044$$EHTML$$P50$$Gwiley$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Lorenz‐Meyer, M. Nicolai L.</creatorcontrib><creatorcontrib>Menzel, Robert</creatorcontrib><creatorcontrib>Dadzis, Kaspars</creatorcontrib><creatorcontrib>Nikiforova, Angelina</creatorcontrib><creatorcontrib>Riemann, Helge</creatorcontrib><title>Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible</title><title>Crystal research and technology (1979)</title><description>In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached.
Herein, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the physical conditions of the process. Experiments are conducted to identify the model parameters and the physical consistency is verified using simulation studies.</description><subject>control engineering</subject><subject>lumped parameter model</subject><subject>mathematical modeling</subject><subject>parameter estimation</subject><subject>silicon crystal growth</subject><issn>0232-1300</issn><issn>1521-4079</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>24P</sourceid><sourceid>WIN</sourceid><recordid>eNqFkMFKw0AQhhdRsFavnvcFUmc3u93kWILWQkXReg6T3VmMbJqySSh9e1Na9OhcZuD_vzl8jN0LmAkA-WAj9jMJEsZR6oJNhJYiUWDySzYBmcpEpADX7KbrvsdKPldywlbrodmR428YsaGeIn9pHQXu28g_6lDbdsuLeOh6DHwZ233_xX1sm_HG7RCwpzEdbF0FumVXHkNHd-c9ZZ9Pj5viOVm_LlfFYp1YmSmVVLnJFDlwaHxlbK60c2mKYDJZEepKo8HM6ApJSetAz32uU2M0zI0nRJFO2ez018a26yL5chfrBuOhFFAeRZRHEeWviBHIT8C-DnT4p10W74vNH_sD4cVisA</recordid><startdate>202008</startdate><enddate>202008</enddate><creator>Lorenz‐Meyer, M. Nicolai L.</creator><creator>Menzel, Robert</creator><creator>Dadzis, Kaspars</creator><creator>Nikiforova, Angelina</creator><creator>Riemann, Helge</creator><scope>24P</scope><scope>WIN</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>202008</creationdate><title>Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible</title><author>Lorenz‐Meyer, M. Nicolai L. ; Menzel, Robert ; Dadzis, Kaspars ; Nikiforova, Angelina ; Riemann, Helge</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2844-b9784ed0da7fb7c945dd33a0782bea5b5a7a875bae42cd056f953775067feaa13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>control engineering</topic><topic>lumped parameter model</topic><topic>mathematical modeling</topic><topic>parameter estimation</topic><topic>silicon crystal growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lorenz‐Meyer, M. Nicolai L.</creatorcontrib><creatorcontrib>Menzel, Robert</creatorcontrib><creatorcontrib>Dadzis, Kaspars</creatorcontrib><creatorcontrib>Nikiforova, Angelina</creatorcontrib><creatorcontrib>Riemann, Helge</creatorcontrib><collection>Wiley-Blackwell Open Access Titles</collection><collection>Wiley Free Content</collection><collection>CrossRef</collection><jtitle>Crystal research and technology (1979)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lorenz‐Meyer, M. Nicolai L.</au><au>Menzel, Robert</au><au>Dadzis, Kaspars</au><au>Nikiforova, Angelina</au><au>Riemann, Helge</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible</atitle><jtitle>Crystal research and technology (1979)</jtitle><date>2020-08</date><risdate>2020</risdate><volume>55</volume><issue>8</issue><epage>n/a</epage><issn>0232-1300</issn><eissn>1521-4079</eissn><abstract>In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached.
Herein, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the physical conditions of the process. Experiments are conducted to identify the model parameters and the physical consistency is verified using simulation studies.</abstract><doi>10.1002/crat.202000044</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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subjects | control engineering lumped parameter model mathematical modeling parameter estimation silicon crystal growth |
title | Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible |
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