Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible

In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the pr...

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Veröffentlicht in:Crystal research and technology (1979) 2020-08, Vol.55 (8), p.n/a
Hauptverfasser: Lorenz‐Meyer, M. Nicolai L., Menzel, Robert, Dadzis, Kaspars, Nikiforova, Angelina, Riemann, Helge
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container_issue 8
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container_title Crystal research and technology (1979)
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creator Lorenz‐Meyer, M. Nicolai L.
Menzel, Robert
Dadzis, Kaspars
Nikiforova, Angelina
Riemann, Helge
description In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached. Herein, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the physical conditions of the process. Experiments are conducted to identify the model parameters and the physical consistency is verified using simulation studies.
doi_str_mv 10.1002/crat.202000044
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subjects control engineering
lumped parameter model
mathematical modeling
parameter estimation
silicon crystal growth
title Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible
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