Front Cover: Mesoporous Silica Supported Highly Dispersed GaN Catalysts Synthesized by Thermal Atomic Layer Deposition for Propane Dehydrogenation (ChemCatChem 19/2022)
The Front Cover depicts the propane dehydrogenation (PDH) reaction on the supported gallium nitride (GaN) catalyst. In their Research Article, Hao Feng and co‐workers report a novel method of synthesizing high surface area GaN catalysts supported on mesoporous silica (MCM‐41) using thermal atomic la...
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Veröffentlicht in: | ChemCatChem 2022-10, Vol.14 (19), p.n/a |
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creator | Zhang, Wangle Li, Jianguo Hui, Longfei Gong, Ting Qin, Lijun Lu, Jian Feng, Hao |
description | The Front Cover depicts the propane dehydrogenation (PDH) reaction on the supported gallium nitride (GaN) catalyst. In their Research Article, Hao Feng and co‐workers report a novel method of synthesizing high surface area GaN catalysts supported on mesoporous silica (MCM‐41) using thermal atomic layer deposition (ALD). GaN nanoparticles are uniformly dispersed on the surface of MCM‐41 with ordered channel structures. Properties of highly dispersed GaN species were studied by various microscopic and spectroscopic techniques. In PDH reaction, the ALD GaN/MCM‐41 catalysts demonstrated excellent activity and selectivity. More information can be found in the Research Article by Hao Feng and co‐workers . |
doi_str_mv | 10.1002/cctc.202201063 |
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In their Research Article, Hao Feng and co‐workers report a novel method of synthesizing high surface area GaN catalysts supported on mesoporous silica (MCM‐41) using thermal atomic layer deposition (ALD). GaN nanoparticles are uniformly dispersed on the surface of MCM‐41 with ordered channel structures. Properties of highly dispersed GaN species were studied by various microscopic and spectroscopic techniques. In PDH reaction, the ALD GaN/MCM‐41 catalysts demonstrated excellent activity and selectivity. 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In their Research Article, Hao Feng and co‐workers report a novel method of synthesizing high surface area GaN catalysts supported on mesoporous silica (MCM‐41) using thermal atomic layer deposition (ALD). GaN nanoparticles are uniformly dispersed on the surface of MCM‐41 with ordered channel structures. Properties of highly dispersed GaN species were studied by various microscopic and spectroscopic techniques. In PDH reaction, the ALD GaN/MCM‐41 catalysts demonstrated excellent activity and selectivity. 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In their Research Article, Hao Feng and co‐workers report a novel method of synthesizing high surface area GaN catalysts supported on mesoporous silica (MCM‐41) using thermal atomic layer deposition (ALD). GaN nanoparticles are uniformly dispersed on the surface of MCM‐41 with ordered channel structures. Properties of highly dispersed GaN species were studied by various microscopic and spectroscopic techniques. In PDH reaction, the ALD GaN/MCM‐41 catalysts demonstrated excellent activity and selectivity. More information can be found in the Research Article by Hao Feng and co‐workers .</abstract><doi>10.1002/cctc.202201063</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0001-5666-5552</orcidid></addata></record> |
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subjects | atomic layer deposition (ALD) Gallium nitride (GaN) propane dehydrogenation supported catalyst |
title | Front Cover: Mesoporous Silica Supported Highly Dispersed GaN Catalysts Synthesized by Thermal Atomic Layer Deposition for Propane Dehydrogenation (ChemCatChem 19/2022) |
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