Effect of Al Concentration on Ferroelectric Properties in HfAlO x ‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications

Since HfO x ‐based ferroelectric tunnel junctions (FTJs) are attractive compared to perovskite‐based FTJs and other emerging memory devices, they are being actively studied recently. They have advantages such as a simple metal–insulator–metal structure, complementary metal oxide semiconductor (CMOS)...

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Veröffentlicht in:	Advanced intelligent systems 2023-08, Vol.5 (8)
Hauptverfasser:	Kim, Jihyung, Kim, Dahye, Min, Kyung Kyu, Kraatz, Matthias, Han, Taeyoung, Kim, Sungjun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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