The Mystery from Tetragonal NaVPO 4 F to Monoclinic NaVPO 4 F: Crystal Presentation, Phase Conversion, and Na‐Storage Kinetics
NaVPO 4 F is regarded as one of the most competitive cathodes in high performance sodium ion batteries (SIBs). Two polymorphs with the tetragonal and monoclinic NaVPO 4 F have been reported, while the true presentation of the fluorophosphates is still poorly understood. Herein, fluorophosphates with...
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Veröffentlicht in: | Advanced energy materials 2021-06, Vol.11 (21) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | NaVPO
4
F is regarded as one of the most competitive cathodes in high performance sodium ion batteries (SIBs). Two polymorphs with the tetragonal and monoclinic NaVPO
4
F have been reported, while the true presentation of the fluorophosphates is still poorly understood. Herein, fluorophosphates with a molar ratio of 1:1:1:1 for Na, V, P, F are fabricated at different temperatures. The presentation of tetragonal and monoclinic NaVPO
4
F is strikingly confirmed. For the first time, the accurate atomic arrangement in the crystal, and the irreversible phase transition from tetragonal to monoclinic with temperature variation are unveiled by combining series of advanced in/ex situ characterizations. From both the thermodynamic and kinetic perspectives, the sodium storage behavior and the electron/Na
+
conduction, contributing to notably different electrochemical performance for the two fluorophosphates, are elaborately studied based on experimental and density functional theory calculations. The comprehensive expositions indicate that the tetragonal and monoclinic NaVPO
4
F have the potential to be employed as high‐energy‐density and high‐power‐density cathodes, respectively. This research answers the question of the true state of the fluorophosphates and reveals some of their previously unexplored mysteries, which provides an instructive selection principle for NaVPO
4
F compounds for serving in well‐defined application scenarios and is expected to become an accelerator for the next generation of high‐performance SIBs. |
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ISSN: | 1614-6832 1614-6840 |
DOI: | 10.1002/aenm.202100627 |