Reversing A Decades‐Long Scaling Law of Dielectric Breakdown using Hydrogen‐Plasma‐Treated HfO 2 ReRAM Devices
Dielectric breakdown (BD) is known to cause component failure in electronic devices and high‐voltage power lines over many decades. In recent years, this failure mechanism has been exploited to intentionally form nanoscale filaments in resistive random‐access‐memory (ReRAM) devices for artificial in...
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| Veröffentlicht in: | Advanced electronic materials 2023-10, Vol.9 (10) |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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