Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory

The breakdown (BD) of one‐selector‐one‐resistor memory cells incurs increasing crosstalk and power consumption in the cross‐point memory array. In this work, failed bit pruning (FBP) operation of selectors is presented to cope with the side effects due to the BD cells. First, the FBP concept and its...

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Veröffentlicht in:	Advanced electronic materials 2022-12, Vol.8 (12), p.n/a
Hauptverfasser:	Ding, Yaxin, An, Junjie, Shen, Jiabin, Jia, Shujing, Guo, Jingrui, Wang, Lingfei, Gong, Tiancheng, Jiang, Pengfei, Wang, Yuan, Chen, Yuting, Zhu, Min, Dou, Chunmeng, Luo, Qing
Format:	Artikel
Sprache:	eng
Schlagworte:	crosstalk failed bit pruning operations leakage currents low power consumption selectors
Online-Zugang:	Volltext
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