Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware

Memristor crossbar arrays can compose the efficient hardware for artificial intelligent applications. However, the requirements for a linear and symmetric synaptic weight update and low cycle‐to‐cycle (C2C) and device‐to‐device variability as well as the sneak‐path current issue have been delaying i...

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Veröffentlicht in:	Advanced electronic materials 2022-11, Vol.8 (11), p.n/a
Hauptverfasser:	Pereira, Maria Elias, Deuermeier, Jonas, Figueiredo, Cátia, Santos, Ângelo, Carvalho, Guilherme, Tavares, Vítor Grade, Martins, Rodrigo, Fortunato, Elvira, Barquinha, Pedro, Kiazadeh, Asal
Format:	Artikel
Sprache:	eng
Schlagworte:	1‐transistor 1‐memristor (1T1M) configuration artificial neural networks (ANNs) applications a‐IGZO thin‐film active crossbars vector‐matrix multiplications (VMMs) operations
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