Lateral Growth of MoS 2 2D Material Semiconductors Over an Insulator Via Electrodeposition

Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS 2 ) over an insulating surface is demonstrated using electrochemical deposition. By fab...

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Veröffentlicht in:	Advanced electronic materials 2021-09, Vol.7 (9)
Hauptverfasser:	Abdelazim, Nema M., Noori, Yasir J., Thomas, Shibin, Greenacre, Victoria K., Han, Yisong, Smith, Danielle E., Piana, Giacomo, Zhelev, Nikolay, Hector, Andrew L., Beanland, Richard, Reid, Gillian, Bartlett, Philip N., de Groot, Cornelis H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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