Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors

Ultrawide‐bandgap semiconductors such as AlN, BN, and diamond hold tremendous promise for high‐efficiency deep‐ultraviolet optoelectronics and high‐power/frequency electronics, but their practical application has been limited by poor current conduction. Through a combined theoretical and experimenta...

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Veröffentlicht in:	Advanced electronic materials 2020-09, Vol.6 (9), p.n/a
Hauptverfasser:	Wu, Yuanpeng, Laleyan, David A., Deng, Zihao, Ahn, Chihyo, Aiello, Anthony F., Pandey, Ayush, Liu, Xianhe, Wang, Ping, Sun, Kai, Ahmadi, Elaheh, Sun, Yi, Kira, Mackillo, Bhattacharya, Pallab K., Kioupakis, Emmanouil, Mi, Zetian
Format:	Artikel
Sprache:	eng
Schlagworte:	aluminum nitride defects light emitting diodes nanostructures optoelectronics ultraviolet optoelectronics
Online-Zugang:	Volltext
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