A Redox‐Based Resistive Switching Memory Device Consisting of Organic–Inorganic Hybrid Perovskite/Polymer Composite Thin Film

This study describes the first perovskite‐based redox resistive switching memory using CH3NH3PbBr3 nanoparticles (NPs) dispersed in an insulating solid polymer electrolyte, poly(ethylene oxide) (PEO), and scrutinizes it in detail. Herein, PEO is chosen not only to perform a matrix function due to it...

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Veröffentlicht in:	Advanced electronic materials 2017-12, Vol.3 (12), p.n/a
Hauptverfasser:	Ercan, Ender, Chen, Jung‐Yao, Tsai, Ping‐Chun, Lam, Jeun‐Yan, Huang, Sophia Chao‐Wei, Chueh, Chu‐Chen, Chen, Wen‐Chang
Format:	Artikel
Sprache:	eng
Schlagworte:	perovskite–polymer blends redox‐based memory resistive switching
Online-Zugang:	Volltext
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