A Redox‐Based Resistive Switching Memory Device Consisting of Organic–Inorganic Hybrid Perovskite/Polymer Composite Thin Film

This study describes the first perovskite‐based redox resistive switching memory using CH3NH3PbBr3 nanoparticles (NPs) dispersed in an insulating solid polymer electrolyte, poly(ethylene oxide) (PEO), and scrutinizes it in detail. Herein, PEO is chosen not only to perform a matrix function due to its ionic conductivity but also to support a preservative material surrounding the CH3NH3PbBr3 NPs to improve their stability. Further, it is revealed that PEO can serve as the chelating agent to coordinate with PbBr2/CH3NH3PbBr3 NPs in consequence of the direct interaction between Pb2+ cations and electron pairs of ether oxygen on the PEO chain to provide a host medium for the Pb2+ cations on both amorphous and crystalline phases. Consequently, it facilitates the associated redox‐based reactions to result in the metallic filament formation in the derived device, leading to the write‐once‐read‐many times resistive switching behavior. The field‐effect scanning electron microscopy and X‐ray photoelectron spectroscopy analyses are conducted to ascertain the detailed mechanism. It is unveiled that a stable dendritic‐like filament is grown in the CH3NH3PbBr3 NPs:PEO hybrid film, which is thus proposed to be the origin of the stable low resistive state and recovery of the conductive path during the reverse bias scan. This study presents a new perspective on the perovskite‐based resistive memory devices. A perovskite‐based redox related resistive switching memory using CH3NH3PbBr3 nanoparticles dispersed in an insulating polymer electrolyte, poly(ethylene oxide) (PEO) is reported and scrutinized. It is found that PEO can facilitate the associated redox‐based reactions, resulting in the dendrite‐like metallic filament formation in the derived device and thus leading to write‐once‐read‐many times (WORM) resistive switching behavior.