Terahertz Generation: THz Generation and Detection on Dirac Fermions in Topological Insulators (Advanced Optical Materials 11/2013)

THz radiation is generated from topological insulators by C. W. Luo, J.‐Y. Lin, and co‐workers using an 800 nm femtosecond laser. Two‐channel free carrier absorption with bulk and surface carriers is indispensable to explaining the strong dependence of THz emission power on the carrier concentration...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Advanced optical materials 2013-11, Vol.1 (11), p.886-886
Hauptverfasser:	Luo, Chih Wei, Chen, Hsueh‐Ju, Tu, Chien Ming, Lee, Chia Ching, Ku, Shin An, Tzeng, Wen Yen, Yeh, Tien Tien, Chiang, Meng Chi, Wang, Harn Jiunn, Chu, Wei Chen, Lin, Jiunn‐Yuan, Wu, Kaung Hsiung, Juang, Jenh Yih, Kobayashi, Takayoshi, Cheng, Cheng‐Maw, Chen, Ching‐Hung, Tsuei, Ku‐Ding, Berger, Helmuth, Sankar, Raman, Chou, Fang Cheng, Yang, Hung Duen
Format:	Artikel
Sprache:	eng
Schlagworte:	bismuth selenide dirac fermions femtosecond laser pulse terahertz generation topological insulators
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	THz radiation is generated from topological insulators by C. W. Luo, J.‐Y. Lin, and co‐workers using an 800 nm femtosecond laser. Two‐channel free carrier absorption with bulk and surface carriers is indispensable to explaining the strong dependence of THz emission power on the carrier concentration. The surface carriers in topological insulators are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission provide valuable information on page 804 regarding the fundamental properties of Dirac fermions.
ISSN:	2195-1071 2195-1071
DOI:	10.1002/adom.201370070