Recent Advances in Memristive Materials for Artificial Synapses
Neuromorphic architectures are in the spotlight as promising candidates for substituting current computing systems owing to their high operation speed, scale‐down ability, and, especially, low energy consumption. Among candidate materials, memristors have shown excellent synaptic behaviors such as s...
Gespeichert in:
Veröffentlicht in: | Advanced materials technologies 2018-12, Vol.3 (12), p.n/a |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | n/a |
---|---|
container_issue | 12 |
container_start_page | |
container_title | Advanced materials technologies |
container_volume | 3 |
creator | Kim, Sun Gil Han, Ji Su Kim, Hyojung Kim, Soo Young Jang, Ho Won |
description | Neuromorphic architectures are in the spotlight as promising candidates for substituting current computing systems owing to their high operation speed, scale‐down ability, and, especially, low energy consumption. Among candidate materials, memristors have shown excellent synaptic behaviors such as spike time‐dependent plasticity and spike rate‐dependent plasticity by gradually changing their resistance state according to electrical input stimuli. Memristor can work as a single synapse without programming support, which remarkably satisfies the requirements of neuromorphic computing. Here, the most recent developments in memristor‐based artificial synapses are introduced with their excellent synaptic behaviors accompanied with detailed explanation of their working mechanisms. As conventional memristive materials, metal oxides are reviewed with recent advancements in heterojunction technologies. An overview of organic materials is presented with their remarkable synaptic behaviors including their advantages of biocompatibility, low cost, complementary metal‐oxide semiconductor compatibility, and ductility. 2D materials are also introduced as promising candidates for artificial synapses owing to their flexibility and scalability. As emerging materials, halide perovskites and low‐dimensional materials are presented with their synaptic behaviors. In the last section, future challenges and research directions are discussed. This review article is hoped to be a guide to rational materials design for the artificial synapses of neuromorphic computing.
Neuromorphic architecture heralds a new era of next generation computing system. Memristor‐based artificial synapses have been considered as promising basic units of neuromorphic computing and have displayed excellent synaptic behaviors. Up‐to‐date advances in artificial synapses are categorized into the type of memristive materials and reviewed with their working mechanisms. Future research directions are provided for improving synaptic functions for neuro‐computing. |
doi_str_mv | 10.1002/admt.201800457 |
format | Article |
fullrecord | <record><control><sourceid>wiley_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_admt_201800457</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ADMT201800457</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3927-9004d9fbd17acd9124b28392e668ff67d6960b2ea5da8a65c9bfc87ea0f3f4903</originalsourceid><addsrcrecordid>eNqFkN9LwzAQx4MoOOZefc4_0HpJ27R5kjJ_TFgRdIJvIU0uEFm7kZRJ_3s7JuqbT3fH9z7H8SHkmkHKAPiNtt2QcmAVQF6UZ2TGM1EkJcj38z_9JVnE-AEATDKRVXxGbl_QYD_Q2h50bzBS39MGu-Dj4A9IGz1g8HobqdsFWofBO2-mmb6Ovd5HjFfkwk0xLr7rnLw93G-Wq2T9_Pi0rNeJySQvEzm9ZaVrLSu1sZLxvOXVlKAQlXOitEIKaDnqwupKi8LI1pmqRA0uc7mEbE7S010TdjEGdGoffKfDqBioowF1NKB-DEyAPAGffovjP9uqvms2v-wXvGZgQg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Recent Advances in Memristive Materials for Artificial Synapses</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Kim, Sun Gil ; Han, Ji Su ; Kim, Hyojung ; Kim, Soo Young ; Jang, Ho Won</creator><creatorcontrib>Kim, Sun Gil ; Han, Ji Su ; Kim, Hyojung ; Kim, Soo Young ; Jang, Ho Won</creatorcontrib><description>Neuromorphic architectures are in the spotlight as promising candidates for substituting current computing systems owing to their high operation speed, scale‐down ability, and, especially, low energy consumption. Among candidate materials, memristors have shown excellent synaptic behaviors such as spike time‐dependent plasticity and spike rate‐dependent plasticity by gradually changing their resistance state according to electrical input stimuli. Memristor can work as a single synapse without programming support, which remarkably satisfies the requirements of neuromorphic computing. Here, the most recent developments in memristor‐based artificial synapses are introduced with their excellent synaptic behaviors accompanied with detailed explanation of their working mechanisms. As conventional memristive materials, metal oxides are reviewed with recent advancements in heterojunction technologies. An overview of organic materials is presented with their remarkable synaptic behaviors including their advantages of biocompatibility, low cost, complementary metal‐oxide semiconductor compatibility, and ductility. 2D materials are also introduced as promising candidates for artificial synapses owing to their flexibility and scalability. As emerging materials, halide perovskites and low‐dimensional materials are presented with their synaptic behaviors. In the last section, future challenges and research directions are discussed. This review article is hoped to be a guide to rational materials design for the artificial synapses of neuromorphic computing.
Neuromorphic architecture heralds a new era of next generation computing system. Memristor‐based artificial synapses have been considered as promising basic units of neuromorphic computing and have displayed excellent synaptic behaviors. Up‐to‐date advances in artificial synapses are categorized into the type of memristive materials and reviewed with their working mechanisms. Future research directions are provided for improving synaptic functions for neuro‐computing.</description><identifier>ISSN: 2365-709X</identifier><identifier>EISSN: 2365-709X</identifier><identifier>DOI: 10.1002/admt.201800457</identifier><language>eng</language><subject>artificial synapses ; memories ; memristors ; memtransistors ; neuromorphic architectures</subject><ispartof>Advanced materials technologies, 2018-12, Vol.3 (12), p.n/a</ispartof><rights>2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3927-9004d9fbd17acd9124b28392e668ff67d6960b2ea5da8a65c9bfc87ea0f3f4903</citedby><cites>FETCH-LOGICAL-c3927-9004d9fbd17acd9124b28392e668ff67d6960b2ea5da8a65c9bfc87ea0f3f4903</cites><orcidid>0000-0002-6952-7359</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadmt.201800457$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadmt.201800457$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Kim, Sun Gil</creatorcontrib><creatorcontrib>Han, Ji Su</creatorcontrib><creatorcontrib>Kim, Hyojung</creatorcontrib><creatorcontrib>Kim, Soo Young</creatorcontrib><creatorcontrib>Jang, Ho Won</creatorcontrib><title>Recent Advances in Memristive Materials for Artificial Synapses</title><title>Advanced materials technologies</title><description>Neuromorphic architectures are in the spotlight as promising candidates for substituting current computing systems owing to their high operation speed, scale‐down ability, and, especially, low energy consumption. Among candidate materials, memristors have shown excellent synaptic behaviors such as spike time‐dependent plasticity and spike rate‐dependent plasticity by gradually changing their resistance state according to electrical input stimuli. Memristor can work as a single synapse without programming support, which remarkably satisfies the requirements of neuromorphic computing. Here, the most recent developments in memristor‐based artificial synapses are introduced with their excellent synaptic behaviors accompanied with detailed explanation of their working mechanisms. As conventional memristive materials, metal oxides are reviewed with recent advancements in heterojunction technologies. An overview of organic materials is presented with their remarkable synaptic behaviors including their advantages of biocompatibility, low cost, complementary metal‐oxide semiconductor compatibility, and ductility. 2D materials are also introduced as promising candidates for artificial synapses owing to their flexibility and scalability. As emerging materials, halide perovskites and low‐dimensional materials are presented with their synaptic behaviors. In the last section, future challenges and research directions are discussed. This review article is hoped to be a guide to rational materials design for the artificial synapses of neuromorphic computing.
Neuromorphic architecture heralds a new era of next generation computing system. Memristor‐based artificial synapses have been considered as promising basic units of neuromorphic computing and have displayed excellent synaptic behaviors. Up‐to‐date advances in artificial synapses are categorized into the type of memristive materials and reviewed with their working mechanisms. Future research directions are provided for improving synaptic functions for neuro‐computing.</description><subject>artificial synapses</subject><subject>memories</subject><subject>memristors</subject><subject>memtransistors</subject><subject>neuromorphic architectures</subject><issn>2365-709X</issn><issn>2365-709X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqFkN9LwzAQx4MoOOZefc4_0HpJ27R5kjJ_TFgRdIJvIU0uEFm7kZRJ_3s7JuqbT3fH9z7H8SHkmkHKAPiNtt2QcmAVQF6UZ2TGM1EkJcj38z_9JVnE-AEATDKRVXxGbl_QYD_Q2h50bzBS39MGu-Dj4A9IGz1g8HobqdsFWofBO2-mmb6Ovd5HjFfkwk0xLr7rnLw93G-Wq2T9_Pi0rNeJySQvEzm9ZaVrLSu1sZLxvOXVlKAQlXOitEIKaDnqwupKi8LI1pmqRA0uc7mEbE7S010TdjEGdGoffKfDqBioowF1NKB-DEyAPAGffovjP9uqvms2v-wXvGZgQg</recordid><startdate>201812</startdate><enddate>201812</enddate><creator>Kim, Sun Gil</creator><creator>Han, Ji Su</creator><creator>Kim, Hyojung</creator><creator>Kim, Soo Young</creator><creator>Jang, Ho Won</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-6952-7359</orcidid></search><sort><creationdate>201812</creationdate><title>Recent Advances in Memristive Materials for Artificial Synapses</title><author>Kim, Sun Gil ; Han, Ji Su ; Kim, Hyojung ; Kim, Soo Young ; Jang, Ho Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3927-9004d9fbd17acd9124b28392e668ff67d6960b2ea5da8a65c9bfc87ea0f3f4903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>artificial synapses</topic><topic>memories</topic><topic>memristors</topic><topic>memtransistors</topic><topic>neuromorphic architectures</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Sun Gil</creatorcontrib><creatorcontrib>Han, Ji Su</creatorcontrib><creatorcontrib>Kim, Hyojung</creatorcontrib><creatorcontrib>Kim, Soo Young</creatorcontrib><creatorcontrib>Jang, Ho Won</creatorcontrib><collection>CrossRef</collection><jtitle>Advanced materials technologies</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Sun Gil</au><au>Han, Ji Su</au><au>Kim, Hyojung</au><au>Kim, Soo Young</au><au>Jang, Ho Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Recent Advances in Memristive Materials for Artificial Synapses</atitle><jtitle>Advanced materials technologies</jtitle><date>2018-12</date><risdate>2018</risdate><volume>3</volume><issue>12</issue><epage>n/a</epage><issn>2365-709X</issn><eissn>2365-709X</eissn><abstract>Neuromorphic architectures are in the spotlight as promising candidates for substituting current computing systems owing to their high operation speed, scale‐down ability, and, especially, low energy consumption. Among candidate materials, memristors have shown excellent synaptic behaviors such as spike time‐dependent plasticity and spike rate‐dependent plasticity by gradually changing their resistance state according to electrical input stimuli. Memristor can work as a single synapse without programming support, which remarkably satisfies the requirements of neuromorphic computing. Here, the most recent developments in memristor‐based artificial synapses are introduced with their excellent synaptic behaviors accompanied with detailed explanation of their working mechanisms. As conventional memristive materials, metal oxides are reviewed with recent advancements in heterojunction technologies. An overview of organic materials is presented with their remarkable synaptic behaviors including their advantages of biocompatibility, low cost, complementary metal‐oxide semiconductor compatibility, and ductility. 2D materials are also introduced as promising candidates for artificial synapses owing to their flexibility and scalability. As emerging materials, halide perovskites and low‐dimensional materials are presented with their synaptic behaviors. In the last section, future challenges and research directions are discussed. This review article is hoped to be a guide to rational materials design for the artificial synapses of neuromorphic computing.
Neuromorphic architecture heralds a new era of next generation computing system. Memristor‐based artificial synapses have been considered as promising basic units of neuromorphic computing and have displayed excellent synaptic behaviors. Up‐to‐date advances in artificial synapses are categorized into the type of memristive materials and reviewed with their working mechanisms. Future research directions are provided for improving synaptic functions for neuro‐computing.</abstract><doi>10.1002/admt.201800457</doi><tpages>30</tpages><orcidid>https://orcid.org/0000-0002-6952-7359</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 2365-709X |
ispartof | Advanced materials technologies, 2018-12, Vol.3 (12), p.n/a |
issn | 2365-709X 2365-709X |
language | eng |
recordid | cdi_crossref_primary_10_1002_admt_201800457 |
source | Wiley Online Library Journals Frontfile Complete |
subjects | artificial synapses memories memristors memtransistors neuromorphic architectures |
title | Recent Advances in Memristive Materials for Artificial Synapses |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T13%3A14%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wiley_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Recent%20Advances%20in%20Memristive%20Materials%20for%20Artificial%20Synapses&rft.jtitle=Advanced%20materials%20technologies&rft.au=Kim,%20Sun%20Gil&rft.date=2018-12&rft.volume=3&rft.issue=12&rft.epage=n/a&rft.issn=2365-709X&rft.eissn=2365-709X&rft_id=info:doi/10.1002/admt.201800457&rft_dat=%3Cwiley_cross%3EADMT201800457%3C/wiley_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |