Manipulating Surface Band Bending of III‐Nitride Nanowires with Ambipolar Charge‐Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication (Adv. Mater. 1/2024)

Photoelectrodes In article number 2307779, Haiding Sun and co‐workers report an electrolyte‐assisted photoelectrode, composed of p‐type‐AlGaN‐nanowire arrays grown on n‐type silicon, which demonstrates spectrally distinctive bipolar photoresponse with a controllable polarity‐switching point over a wide spectrum. Importantly, they achieve reprogrammable photoswitching logic gates in such a single photoelectrode, aiming for the realization of encrypted optical wireless communication and multifunctional integrated‐photonics systems.