Room-Temperature Antisymmetric Magnetoresistance in Van Der Waals Ferromagnet Fe 3 GaTe 2 Nanosheets

Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of two-dimensional (2D) spintronic devices. 1 However, studies to date have been restricted to vdW ferromagnetic materials with low Curie temperature (T ) and small magnetic anisotropy. 2 Here, we developed a chemical vapor transport (CVT) method to synthesize a high-quality room-temperature ferromagnet, Fe GaTe (c-Fe GaTe ), which boasts a high Curie temperature (T = 356 K) and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, we firstly observed an unconventional room-temperature antisymmetric magnetoresistance (MR) in c-Fe GaTe devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, we demonstrated the modulation of the antisymmetric MR by controlling the height of the surface steps. Our work provides new routes to achieve magnetic random storage and logic devices by utilizing the room-temperature thickness-controlled antisymmetric MR and further design room-temperature 2D spintronic devices based on the vdW ferromagnet c-Fe GaTe . This article is protected by copyright. All rights reserved.