Van der Waals Semiconductors: Infrared Permittivity of the Biaxial van der Waals Semiconductor α‐MoO 3 from Near‐ and Far‐Field Correlative Studies (Adv. Mater. 29/2020)

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Veröffentlicht in:Advanced materials (Weinheim) 2020-07, Vol.32 (29)
Hauptverfasser: Álvarez‐Pérez, Gonzalo, Folland, Thomas G., Errea, Ion, Taboada‐Gutiérrez, Javier, Duan, Jiahua, Martín‐Sánchez, Javier, Tresguerres‐Mata, Ana I. F., Matson, Joseph R., Bylinkin, Andrei, He, Mingze, Ma, Weiliang, Bao, Qiaoliang, Martín, José Ignacio, Caldwell, Joshua D., Nikitin, Alexey Y., Alonso‐González, Pablo
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container_issue 29
container_start_page
container_title Advanced materials (Weinheim)
container_volume 32
creator Álvarez‐Pérez, Gonzalo
Folland, Thomas G.
Errea, Ion
Taboada‐Gutiérrez, Javier
Duan, Jiahua
Martín‐Sánchez, Javier
Tresguerres‐Mata, Ana I. F.
Matson, Joseph R.
Bylinkin, Andrei
He, Mingze
Ma, Weiliang
Bao, Qiaoliang
Martín, José Ignacio
Caldwell, Joshua D.
Nikitin, Alexey Y.
Alonso‐González, Pablo
description
doi_str_mv 10.1002/adma.202070220
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title Van der Waals Semiconductors: Infrared Permittivity of the Biaxial van der Waals Semiconductor α‐MoO 3 from Near‐ and Far‐Field Correlative Studies (Adv. Mater. 29/2020)
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